共查询到20条相似文献，搜索用时 159 毫秒
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发电机调节器是用于调节发电机的输出电压的,当发电机输出电压过高时,调节器将断开发电机的磁场通路停止发电。当发电机输出电压过低时,发电机调节器接通磁场通路,发电机工作。电路如图所示。汽车电器设备中发电机调节器是一个很重要的电路教学中是一个重点和难点,特别是学生对下列问题难于理解:①A、B两点间的电压确定。②三极管V1、V2什么时候导通,什么时候截止。学生之所以存在上述问题,笔者认为主要原因是:①学生的电工、电子基础不够扎实,基本概念不清楚。②缺乏对基本概念的应用。在处理上述教学难点的过程中,笔者主要采用了下述方… 相似文献
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在分析现有车用电子式电压调节器工作原理的基础上，针对存在的问题设计了集成电路车用发电机线性电压调节器的电路原理图，指出了调宽式车用发电机线性电压调节器的电路组成、工作原理和电路特点． 相似文献
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赵常伟 《辽宁科技学院学报》2009,11(1):26-28
针对电弧炉电极调节器对电网电压波动的影响在Matlab/Simulink环境下,利用Simulink提供的专用模块库,搭建交流电弧炉控制系统的仿真模型并进行仿真研究。通过调节电极调节器的参数,研究其对电网电压波动产生影响的情况。仿真结果表明,通过调节电极调节器的参数,可以减少电压波动,降低无功补偿装置的容量,节约工程投资。 相似文献
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朱更军 《金华职业技术学院学报》2009,9(6):42-44
基于DSP（TMS320LF2407A）的谐波励磁发电机数字电压调节器工作原理,设计一种新型的数字电压调节器,该调节器运用PWM技术、高频开关管和变参数PID算法实现对发电机输出电压的控制,并使用DELPHI设计了上位机监控界面。实际运行结果表明：该调节器具有调节速度快、精度高、性能可靠等特点。 相似文献
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本文首先介绍蓝鸟轿车充电系统主要组成元件,然后详细地分析电压调节器的工作原理。 相似文献
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一、挖掘隐含条件，确保解题的正确性例１如右图所示电路中，小灯泡L上标有“８V３．２W”字样，滑动变阻器的最大阻值为４０Ω，R１的阻值为１８Ω．（１）求小灯泡L的电阻．（２）S、S１、S２均闭合时，电压表的示数为９V，求电源电压及电阻R１上消耗的电功率．（３）断开S１、S２，闭合S，若接入电路中的电压表的量程改为０～３V，电流表的量程为０～０．６A，为了保证两表均不超过量程，且小灯泡两端的电压不超过其额定电压，滑动变阻器的阻值变化范围为多少？（２００２年长沙市中考题）分析：题中“小灯泡两端的电压不超过其额… 相似文献
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此实验中,滑动变阻器的作用是换用不同的定值电阻,如5Ω、10Ω、15Ω时,保持每次定值电阻两端的电压不变;然而在利用滑动变阻器完成此实验的过程中,都发现一奇怪现象,现简述如下:第一次(1)R=5Ω,调节滑动变阻器,使电压表示数为1V;(2)R=10Ω,调节滑动变阻器,但电压表示数却在1.2V~1.9V之间,由于电压不能保持为1V,该实验无法进行。同样用该实验器材再做。第二次(1)R=5Ω,调节滑动变阻器,使电压表示数为2V;(2)R=10Ω,调节滑动变阻器,使电压表示数为2V;(3)R=15Ω,调节滑动变阻器,使电压表示数为2V;由于三次电压均能保持不变,此实验又能顺利… 相似文献
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利用Simulink搭建带电极调节器的交流电孤炉系统的仿真模型.改变电极调节器的控制策略,分别采用PID和模型参考自适应的控制方法,得到电网电压波动的仿真结果.仿真结果表明采用先进的控制策略,提高了电极调节系统的性能,使得电弧炉引起的电网电压波动的幅值大大减小. 相似文献
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对于转速、电流、电压多闭环系统，通过理论分析和仿真实验，认为电压内环的工程优化设计，应采用比例或比例积分调节器进行校正，而不宜选用积分调节器。 相似文献
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1 Introduction Organic semiconductors are receiving considerableattention due to their remarkable advantages especiallyvarious manufacturing methods ,lowcost and plentifulmaterials .Ebisawa ,et al.[1]fabricated the first poly-mer-based transistor in 1983 . Since then,lots of re-search works have been done in the filed of organicmaterial-based transistors .It was reported that organicthin-fil m transistor ( OTFT) fabricated by usingorganic semiconductor material copper-phthalocyanine(CuPc)[2… 相似文献
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村级人民调解员的选任和培训 总被引：1，自引：0，他引：1
靳凤娣 《商丘职业技术学院学报》2011,10(1):22-23
《:人民调解法》规定,农村人民调解委员会由委员3至9人组成,委员由村民会议推选产生,并对人民调解员的监督、培训与罢免等作出了规定。农村人民调解委员会能否发挥"解决民间纠纷、维护社会和谐稳定"的作用,全赖于有没有一支公道正派、热心人民调解工作,并具有一定法律知识的人民调解员。因此,村级人民调解员的选任和培训工作,成为农村人民调解制度的关键。 相似文献
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为船模各转动惯量参数的调试提供辅助帮助，采用数字测量技术，集成、实时、快速、准确测量船模的重心位置、重量、转动惯量的装置，称为机电式船模惯量调节架。该设备能够实现质量测量、倾角测量、水平判断及周期测量的计算机集成测量，对发展船模试验技术具有一定意义。 相似文献
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晶闸管的选择参数很多,但用于可控整流时,主要是额定电流、额定电压的计算与选择。晶闸管由于过电流过电压能力低,文常常工作在不同的电流波形情况下,给额定电流的选择带来一定的困难,如若额定值选择不当,会造成不必要的损失或浪费。根据实际工作条件,在满足需要的前提下,应尽量降低晶闸管的定额,以减少设备投资。 相似文献
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Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunction bipolar transistor （ HBT） is designed and fabricated. Molecule beam extension, selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance （NDR） and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT,the groove is the key factor producing NDR. 相似文献
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Monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is an important development direction of ultra-high speed integrated circuit. A kind of top-RTD and bottom-HEMT material structure is epitaxied on InP substrate through molecular beam epitaxy. Based on wet chemical etching, metal lift-off and air bridge interconnection technology, RTD and HEMT are fabricated simultaneously. The peak-to-valley current ratio of RTD is 7.7 and the peak voltage is 0.33 V at room temperature. The pinch-off voltage is -0.5 V and the current gain cut-frequency is 30 GHz for a 1.0 μm gate length depletion mode HEMT. The two devices are conformable in current magnitude, which is suitable for the construction of various RTD/HEMT monolithic integration logic circuits. 相似文献
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An accurate circuit of PWM/PFM mode converting and a circuit of auto-adaptively adjusting dimension of power transistor are
described. The duty cycle of the signal when the control mode converts can be gained accurately by using ratios of currents
and capacitances, and an optimal dimension of power transistor is derived with different loads. The converter is designed
by 0.35 μm standard CMOS technology. Simulation results indicate that the converter starts work at 0.8 V input voltage. Combined
with synchronized rectification, the transfer efficiency is higher than 90% with full load range, and achieves 97.5% at rating
output. 相似文献
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Based on the region model of lambda bipolar transistor （ LBT）, a dividing region theory model of PLBT is set up.simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor ,（ PLBT） are characterized by a simple circuit model. Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly. by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simulation results are made, which show that the analytical results are in agreement with the observed devices characteristics. 相似文献