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INDRODUCTIONMeso-poroussilicafilmswithanexcellentheat-insulatingpropertyandtherelativelylowdielectricvalueplayparticularlyimportantroleinelectronicandmagneticdevices(Moonetal.,1997),etc.;thosewithporesizesof5nmto50nmarealsoofinterestforapplicationsinphotonics,optoelec-tronics,lightweightstructuralmaterialthermalin-sulation,opticalcoating(Moonetal.,1997;HusingandSchulert,1998;Davis,2002).Theirspecialnetworkstructureisusedinsounddetector(HusingandSchubert,1998);theirexcellentinsulatingpro… 相似文献
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A homogeneous crack-free nano- or meso-porous silica films on silicon was fabricated by colloidal silica sol derived by hydrolyzing tetraethyl orthosilicate (TEOS) catalyzing with (C4H9)4N OH- in water medium. The solution with ratio of H2O/TEOS≥15, R4N and glycerol as templates, combining with the hydrolyzed intermediate, controlled the silica aggregating; the templated silica film with heterostructure was developed into homogeneous nano-porous then meso-porous silica films after being annealed from 750 ℃ to 850 ℃; the formation mechanism of the porous silica films was discussed; morphologies of the silica films were characterized. The refractive indexes of the porous silica films were 1.256-1.458, the thermal conductivity < 0.7 W/m/K. The fabricating procedure and the sequence had not been reported before. 相似文献
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INTRODUCTION The scaling down of silicon integrated circuitshas pushed conventional SiO2 gate films close to itsphysical limit. When the SiO2 physical thicknessbecome thinner than ~3 nm, direct tunneling throu-gh the dielectric barrier dominates the leakage cur-rent (Xiang et al., 2003). A high-k dielectric mate-rial LaAlO3 (LAO) to solve this problem has at-tracted much attention for fabrication of advancedcomplementary metal-oxide-semiconductor field-effect transistors (CMOS-… 相似文献
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Well-cubic perovskite lanthanum aluminate (LaAlO3) film on (110) silicon substrate was fabricated by sol-gel method with corresponding inorganic salts. Lanthanum acetate and aluminum acetate glacial acetic acid solutions were prepared via ligand exchange starting from lanthanum nitrate hexahydrate and aluminum nitrate hexahydrate after being refluxed. (CH3CO)2O removed nitrates and the crystallized H2O completely, acetylacetone (AcAc) was partially bidentated with metallic ion of the metallic acetates and formed La(OAc)3(x(AcAc)x, which were hydrolyzed into La(AcAc)3(x(OH)x by adding 10 ml 0.4% methyl cellulose (MCL) solution. The La(AcAc)3(x(OH)x, polymerizing and combining with MCL, formed the LaAlO3 sol precursor with heteropolymeric structure and formed film easily. The epitaxial LaAlO3 film on Si(110) substrate was crystallized after being annealed in thermal annealing furnace for 650(750 (C/30 min. The morphologies and microstructures were characterized. The refractive index of the LAO film was 1.942 to 2.007; the dielectric constant and the dissipation factors were estimated to be 23(26 and 2.1(10(4 ( 2.4(10(4 respectively. 相似文献
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