| Switching Characteristics and Analysis of Resonant Tunneling Diodes |
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| 作者姓名： | 张世林 朱怡 郭维廉 |
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| 作者单位： | School of Elecronic Information Engineering, Tianjin University, Tianjin 300072, China |
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| 基金项目： | Supported by National Natural Science Foundation of China（No. 60177010）. |
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| 摘 要： | Resonant tunneling diode （RTD） of AlAs/InGaAs/AlAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 ： 1 at room temperature. The scattering parameter of RTD was measured by using an HP8510（C） network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.
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| 关 键 词： | 谐振隧道二极管 等效电路 开关时间 S参量 |
| 收稿时间： | 2005-08-25 |
Switching Characteristics and Analysis of Resonant Tunneling Diodes |
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| ZHANG Shilin,ZHU Yi,GUO Weilian.Switching Characteristics and Analysis of Resonant Tunneling Diodes[J].Transactions of Tianjin University,2006,12(1):19-22. |
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| Authors: | ZHANG Shilin ZHU Yi GUO Weilian |
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| Abstract: | Resonant tunneling diode ( RTD ) of AlAs/lnGaAs/AIAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 : I at room temperature. The scattering parameter of RTD was measured by using an HPS510(C) network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps. |
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| Keywords: | resonant tunneling diodes (RTD) S parameter equivalent circuit switching time |
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