| Ni51.6Mn23.4Ga25单晶磁场增强的双向形状记忆效应 |
| |
| 引用本文： | 崔玉亭.Ni51.6Mn23.4Ga25单晶磁场增强的双向形状记忆效应[J].商丘师范学院学报,2006,22(2):12-16. |
| |
| 作者姓名： | 崔玉亭 |
| |
| 作者单位： | 商丘师范学院,物信系,河南,商丘,476000 |
| |
| 基金项目： | 国家自然科学基金项目(批准号:50371101)资助，河南省教育厅自然科学研究(批准号:2004140005)资助项目 |
| |
| 摘 要： | 测量了Ni51.6Mn23.4Ga25单晶的交流磁化率、电阻、有无磁场下的相变应变.结果表明该材料的马氏体相变温度为252K,相变热滞后仅为6K,自发相变应变量高达-1.15%.沿应变测量方向和垂直应变测量方向施加960KA/m的磁场,双向形状记忆的应变量分别增强到-2.35%和0.56%.分析表明该单晶的大自发相变应变量起源于内应力诱导的变体择优取向,而磁增强的相变应变量归功于外加磁场通过孪晶界移动的方式诱导的变体择优取向.
|
| 关 键 词： | 马氏体相变 应变 形状记忆效应 |
| 文章编号： | 1672-3600（2006）02-0012-05 |
| 收稿时间： | 2005-04-20 |
| 修稿时间： | 2005年4月20日 |
Magnetic field- induced two- way shape memory effect on Ni50.5Mn26.5Ga23 single crytal |
| |
| CUI Yu-ting.Magnetic field- induced two- way shape memory effect on Ni50.5Mn26.5Ga23 single crytal[J].Journal of Shangqiu Teachers College,2006,22(2):12-16. |
| |
| Authors: | CUI Yu-ting |
| |
| Institution: | Department of Physics, Shangquiu Teacher College, Shangqiu 476000, China |
| |
| Abstract: | The alternating-current magnetic susceptibility,resistance,martensitic transformation strain with and without a biasing magnetic field on the Ni_(51.6)Mn_(23.4)Ga_(25) single crystal was measured.It was found that the martensitic transformation occurs at about 252K,with a small thermal hysteresis of 6 K,and a large spontaneous strain of-1.15% in the direction.The strain relating to the two-way shape memory effect is enhanced up to-2.35% and 0.56% with a biasing field 960 KA/m applied along the measuring direction and perpendicular measuring direction,respectively.Investigation indicates that the large spontaneous strain originates from the preferential orientation of variants induced by the residual internal stress and the field-enhanced transformation strain is attributed to the preferential orientation of variants performed by twin boundary motion. |
| |
| Keywords: | martensitic transformation strain shape memory effect |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
