| 一维势阱并伴有自旋轨道耦合的输运 |
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| 引用本文： | 李国锋.一维势阱并伴有自旋轨道耦合的输运[J].赣南师范学院学报,2009,30(3):52-54. |
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| 作者姓名： | 李国锋 |
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| 作者单位： | 安徽大学,物理学院,合肥,230031 |
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| 摘 要： | 研究一束自旋极化电子在准一维系统中的榆运，输运电子经过一个势阱和SOI共同作用的散射区．研究发现经过散射后电子自旋翻转的概率与费米能廓、势阱的深度Vo、自旋轨道耦合的强度λR以及各通道的能级Ej，并且翻转概率具有周期振荡特性，即随散射区的长度呈周期性变化．
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| 关 键 词： | 量子势阱 SOI耦合(Rashba) 自旋翻转 平面波近似 |
Spin Transport Property Through Semiconductor Quantum Well |
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| LI Guo-feng.Spin Transport Property Through Semiconductor Quantum Well[J].Journal of Gannan Teachers' College(Social Science(2)),2009,30(3):52-54. |
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| Authors: | LI Guo-feng |
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| Institution: | Department of Physics;Anhui University;Hefei 230031;China |
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| Abstract: | The transport of polarized electron in a quasi-one dimension system is investigated.The electron transport through a quantum well and the combined effect of SOI scattering zone.We find that mang physics factor such as femi energy EF,the deepth of quantum well V0 and the channel Ej can influence the spin-flip probability,and spin-flip probability have a cycle oscillation behavior with the length of the scattering area. |
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| Keywords: | numerical well SOI Rashba self-turning level wave probalility |
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