| X波段GaAs PHEMT单片有源上变频器设计 |
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| 引用本文： | 宋静,陈兴国,唐亮.X波段GaAs PHEMT单片有源上变频器设计[J].安徽教育学院学报,2011,29(3):45-48. |
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| 作者姓名： | 宋静 陈兴国 唐亮 |
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| 作者单位： | 中国电子科技集团公司第38研究所; |
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| 摘 要： | 采用0.25μm GaAs PHEMT工艺研制了一个X波段单片有源上变频器。电路集成了Gilbert混频电路、RF补偿放大器和LO缓冲器,在提高了单片电路集成度的同时,获得了较好的性能指标。实际测试结果表明：变频增益大于10dB;各端口匹配良好,在工作频带内回波损耗小于10dB;1dB增益压缩点输出功率达到4dBm;所需本振功率为-3dBm。
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| 关 键 词： | 单片有源上变频器 Gilbert混频单元 GaAs PHEMT工艺 变频增益 |
Design of X-band GaAs PHEMT Active Upmixer MMIC |
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| SONG Jing,CHEN Xing-guo,TANG Liang.Design of X-band GaAs PHEMT Active Upmixer MMIC[J].Journal of Anhui Institute of Education,2011,29(3):45-48. |
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| Authors: | SONG Jing CHEN Xing-guo TANG Liang |
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| Institution: | SONG Jing,CHEN Xing-guo,TANG Liang(The 38th Research Institute of China Electronic Technology Corporation,Hefei 230031,China) |
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| Abstract: | A monolithic X-band active upmixer has been developed by adopting the 0.25μm GaAs PHEMT technology.The monolithic circuit integrates Gilbert cell mixer,RF compensated amplifier and LO buffer to enhance the integration of elementary circuits and achieves good performances.The measure results show： the frequency conversion is higher than 10 dB;all ports are well matched with return loss less than-10 dB in the operating frequency;Output power of 1 dB compression point reaches 4dBm;LO driver power is as low as-3dBm. |
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| Keywords: | active upmixer MMIC Gilbert cell GaAs PHEMT technology frequency conversation |
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