| Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering |
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| 作者姓名： | 樊攀峰 张之圣 胡明 刘志刚 |
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| 作者单位： | School of Electronic Information Engineering Tianjin University Tianjin 300072，China，School of Electronic Information Engineering Tianjin University，Tianjin 300072，China，School of Electronic Information Engineering Tianjin University，Tianjin 300072，China，School of Electronic Information Engineering Tianjin University，Tianjin 300072，China |
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| 摘 要： | Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Lead zirconate titanate(PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34.357 nm, 2.479 nm and 1.954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 μC/cm2 and 13 μC/cm2 respectively.
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| 关 键 词： | PZT 铁电薄膜 制备 表征 磁控反应溅射 钙钛矿 滞电环 纳米粒子 |
| 收稿时间： | 2005-11-03 |
Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering |
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| FAN Panfeng,ZHANG Zhisheng,HU Ming,LIU Zhigang.Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering[J].Transactions of Tianjin University,2006,12(2):96-99. |
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| Authors: | FAN Panfeng ZHANG Zhisheng HU Ming LIU Zhigang |
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| Abstract: | Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate(PZT) thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency (RF) magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34. 357 nm, 2. 479 nm and 1. 954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.6. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10 μC/cm2 and 13 μC/cm2 respectively. |
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| Keywords: | PZT thin films radio frequency magnetron sputtering perovskite structure electric hysteresis loop |
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