| 硅基红光光源的制备和研究 |
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| 引用本文： | 陈德媛.硅基红光光源的制备和研究[J].中国科技纵横,2011(24):115-116. |
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| 作者姓名： | 陈德媛 |
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| 作者单位： | 南京邮电大学电子科学与工程学院,江苏南京210046 |
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| 摘 要： | 红光器件是通信领域各种光纤跳线、尾纤以及光纤线路维护等的重要捡测工具。而目前，红光光源的制备材料均为三五族材料的化合物半导体，如掺磷砷化镓等。为了降低成本研究制备出硅基红光光源是非常好的选择。本文中介绍了应用常规的等离子体增强化学气相淀积技术制备基于碳化硅的Fabry—Pemt结构全固态一维平面微腔。在488nm的激光激发下得到线宽为11nm，品质因子为59，峰位在646nm的发光谱线。与有源层的发光相比强度增强了2倍。为实现硅基光源在通信领域的应用奠定了基础。
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| 关 键 词： | 红光光源 硅基器件 品质因子 |
Fabrication and Study of Silicon-based red laser |
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| Authors: | Chen Deyuan |
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| Institution: | Chen Deyuan (College of Electronics Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046) |
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| Abstract: | Red laser is applied extensively in the communication area to test fiber patchcord, tail fiber and maintain fiber circuit. Right now, the ma- terials used to prepare red laser is IlI-V compound semiconductors, such as GaAs, which is high-cost. Silicon is the most abundant semiconductor, so it is necessary to fabricate Silicon-based red light emitting device with high intensity to deduce the cost. In this paper, silicon carbide film with different flux ratio is prepared and study, and full solid Fabry-Perot micro-cavity based on silicon carbide is prepared according to the optical properties of the films of different ratio. The cavity mode is around 640nm, which is nearly to de designed value, 650nm. The line width and the cavity mode is llnm, and the nnnlltv fa~tnr ix 5q The intensity at cavitv rnnda ix enhanead by 2 times than that of the active layer. |
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| Keywords: | red laser silicon-based device quality factor |
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