| N~+和N_2~+离子注入硅的材料性能研究 |
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| 引用本文： | 王国全,解英艳.N~+和N_2~+离子注入硅的材料性能研究[J].大连大学学报,2005,26(2):14-16,57. |
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| 作者姓名： | 王国全 解英艳 |
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| 作者单位： | 1. 沈阳大学,基础部,辽宁,沈阳,110044
2. 大连大学,建筑工程学院,辽宁,大连,116622 |
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| 摘 要： | 本文应用X射线衍射方法、红外光谱分析方法、扩展电阻测量方法研究了N+和N+2注入硅的应变、损伤度、扩展电阻率随注入剂量、注入深度变化的规律,形成Si3N4非晶层的条件.建立了多层的物理模型和胁变函数的数学模型,利用计算机和曲线拟合等手段,得出了合理的结论.
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| 关 键 词： | 胁变 损伤层 扩展电阻 |
| 文章编号： | 1008-2395(2005)02-0014-04 |
| 修稿时间： | 2005年3月9日 |
Research of material function after implanting Si with N+and N+2 |
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| WANG Guo-quan,XIE Ying-yan.Research of material function after implanting Si with N+and N+2[J].Journal of Dalian University,2005,26(2):14-16,57. |
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| Authors: | WANG Guo-quan XIE Ying-yan |
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| Abstract: | In this paper, the regularity of the changed dosage and the depth of strain, the injury layer, the spreading resistance when N~(+)and N~+_2 were pouring into Si, were investigated. And the forming condition of Si_(3)N_(4)amorphous layer was also studied. The X-ray diffraction method, as well as the analytical method of infrared absorption, together with the measurement of spreading resistance was used. A physical multi-layered model and a mathematical model of strain function had been set up. By use of the computer and the curve fitting method, some rational conclusions were drawn. |
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| Keywords: | strain injury layer spreading resistance |
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