| 铱的纳米氧化物作为神经电极(英文) |
| |
| 引用本文： | 李仁变,黄清南,朴宗哲,崔福斋.铱的纳米氧化物作为神经电极(英文)[J].大连大学学报,2004,25(2):28-30. |
| |
| 作者姓名： | 李仁变 黄清南 朴宗哲 崔福斋 |
| |
| 作者单位： | 1. 延世大学,韩国
2. 清华大学,北京,100080 |
| |
| 基金项目： | the Korea Ministry of Science and Technology，M1-0214-00-0064， |
| |
| 摘 要： | 厚度为30nm和60nm的铱薄膜应用电子束蒸发硅(Si)和商用纯钛(CP)Ti的薄片而制成 铱薄膜的性能表明它与大片的由Ir和Ir氧化物培育的成纤维细胞Ir.Swiss3T3具有相同的电荷注射性能,并且没有细胞毒性 也表明,在电极上培育的胚胎皮质的神经细胞显示出由于神经纤维的形成而有粘着的活神经元
|
| 关 键 词： | 铱纳米氧化薄膜 电子束蒸发 纳米薄膜 |
Iridium nano-oxide as a neural electrode |
| |
| Abstract.Iridium nano-oxide as a neural electrode[J].Journal of Dalian University,2004,25(2):28-30. |
| |
| Authors: | Abstract |
| |
| Abstract: | Iridium film with the thickness of 30 nm and 60 nm were formed on both Si wafer and commercially pure (CP) Ti by electron beam evaporation. The thin iridium film showed the identical charge injection capability with the bulk Ir. Swiss 3T3 fibroblasts culture on Ir and Ir oxide showed no cytotoxicity. Also, embryonic cortical neural cell culture on electrode indicated neurons adhered and survived by the formation of neurofilament. |
| |
| Keywords: | thin Ir nano-oxidic film electron beam evaporation nano-film |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
