| SiGe材料系自组织Ge量子点研究(英文) |
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| 作者姓名： | 黄昌俊 王启明 |
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| 作者单位： | 中国科学院半导体研究所集成光电国家重点实验室 北京100083 |
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| 基金项目： | supportedbythemajorstatebasicresearchprogram(973)(G2000036603),"863 "ResearchPlan; andNationalNaturalScienceFoundationofChina(69876260) |
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| 摘 要： | 在当今Si基光电子研究中,SiGe材料系自组织Ge量子点是最有希望对Si材料运用能带工程实现人工改性的途径之一。Ge在Si上 4.2 %的晶格失配可以制造大小尺寸不同的纳米结构,还可适应其他多种器件需要。对自组织Ge量子点的形成过程、形貌演化、光学和电学性质,以及提高量子点平面排布有序性的方法进行了系统的分析和研究,并着重介绍了实验中发现的新现象、新模型和新方法,其中包括量子点的反常形状跃迁、自覆盖效应、Ge/Si量子点的II型能带结构、Ge/Si量子点的载流子热弛豫模型和纳米尺寸的周期性图形衬底的全息制备方法.
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| 关 键 词： | Ge量子点 Si基光电子 自组织纳米微结构 异质外延生长 |
| 收稿时间： | 2003-01-06 |
Self-Assembled Germanium Quantum Dots in Silicon Germanium Material System |
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| Authors: | Huang Changjun Wang Qiming |
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| Institution: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | In Silicon-based optoelectronics research, the self-assembled Ge quantum dots are one of the most promising potential means to explore the novel properties of Si by applying the bandgap engineering. The lattice mismatch of 4.2% between the Ge and Si can provide us various nanostructures in a wide range of size, which can be utilized to realize the future electrical and optical devices. By introducing the growth techniques and device application perspectives of self-assembled Ge quantum dots, describing the morphological evolution of the Ge grown on Si (001) substrate and the optical and electronic properties of these nanostructure,the authors reveal the approaches to fabricate the ordered Ge quantum dots. Some novel findings in our work will be included, such as the reverse shape transition of the quantum dots,the self-embedding effect, the verification of band alignment of Ge quantum dots, the thermal relaxation model of the carriers in Ge/Si multilayer structure, and a new approach to fabricate the patterned substrate for ordered Ge quantum dots. |
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| Keywords: | Ge quantum dots Si-based optoelectronics self-assembled nanostructure heteroepitaxial crystal growth |
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