| 电压补偿法测晶体二极管的正向特性 |
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| 引用本文： | 冯春杰,邓华军,郭宗富.电压补偿法测晶体二极管的正向特性[J].安顺学院学报,2011,13(2):85-87. |
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| 作者姓名： | 冯春杰 邓华军 郭宗富 |
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| 作者单位： | 安顺学院物理与电子科学系,贵州,安顺,561000 |
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| 摘 要： | 晶体二极管的主要内部结构为PN结,故晶体二极管具有单向导电性能,且其单向导电性能随PN结掺杂浓度和晶体二极管所处的环境温度的改变而改变。晶体二极管属于非线性元件,理论推导可知其伏安特性曲线为指数曲线。
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| 关 键 词： | 晶体二极管 正向特性 电压补偿法 |
Compensate the Method Measure Crystal Diode Just toward the Characteristic |
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| Feng Chunjie,Deng Huajun,Guo Zongfu.Compensate the Method Measure Crystal Diode Just toward the Characteristic[J].Journal of Anshun College,2011,13(2):85-87. |
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| Authors: | Feng Chunjie Deng Huajun Guo Zongfu |
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| Institution: | (1、2、3.Physical and Electronic Science Department,Anshun University,Anshun 561000,Guizhou,China) |
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| Abstract: | The main inner structure of the crystal diode is PN knot,so the crystal diode has one-way conduct electric function which changing with blending of PN knot density and the environment temperature of the crystal diode.the crystal diode belongs to not-line component and through theory deducing we can know its Fu Anne characteristic curve is index number curve. |
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| Keywords: | crystal diode just to characteristic the electric voltage compensate the Fu Anne’s method |
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