| 一种纯CMOS低功耗高电源抑制电压基准电路 |
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| 引用本文： | 于建海,尹亮.一种纯CMOS低功耗高电源抑制电压基准电路[J].实验室研究与探索,2020(3):50-54. |
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| 作者姓名： | 于建海 尹亮 |
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| 作者单位： | 1.梧州学院电子与信息工程学院;2.哈尔滨工业大学MEMS中心 |
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| 基金项目： | 国家自然科学基金(61562074);广西高校科学技术研究项目(KY2015ZD123);广西创新驱动发展专项(科技重大专项)(桂科AA181180361)。 |
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| 摘 要： | 基于阈值电压的负温度特性以及热电压的正温度特性,给以适当的权重后把它们相加,提出了一个零温度系数的基准电压电路。该器件由工作在亚阈值区的CMOS晶体管组成,不包含电阻和双极晶体管。采用3支路电流基准结构替代共源共栅结构和嵌入式运算放大器,具有芯片面积小和功耗低的优点。仿真结果表明,在标准0.18μmCMOS工艺下,该电路可在0.75 V电源电压下工作,输出电压为563 mV。在-40~125℃范围内,电压温度系数仅为17.5×10^-6/℃。电源电压范围在1.2~1.8 V时线性灵敏度为569.5×10^-6/V,电源抑制比可达到66.5 dB@100 Hz,最高功耗仅为187.4 nW。
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| 关 键 词： | 低功耗 纯CMOS 亚阈值 电流基准源 |
An All-CMOS Low Power High PSRR Voltage Reference Circuit |
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| YU Jianhai,YIN Liang.An All-CMOS Low Power High PSRR Voltage Reference Circuit[J].Laboratory Research and Exploration,2020(3):50-54. |
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| Authors: | YU Jianhai YIN Liang |
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| Institution: | (School of Electronic and Information Engineering,Wuzhou University,Wuzhou 543002,Guangxi,China;MEMS Center,Harbin Institute of Technology,Harbin 150001,China) |
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| Abstract: | Based on the negative temperature characteristics of threshold voltage and positive temperature characteristics of thermal voltage,by adding them with proper weight coefficient a voltage reference circuit was proposed with a zero temperature coefficient(TC).The device consists of pure MOSFET operated in sub-threshold region and uses no resistors and bipolar transistors.The triple-branch current reference structure is adopted for instead of cascade structure and embedded operational amplifier structure with the merit of chip area and power consumption.Simulation results showed that based on standard CMOS 0.18μm process,the circuit can operate at 0.75 V supply voltage with the output voltage only 563 mV.The TC of the voltage was 17.5×10^-6/℃in a range from-40℃to 125℃.The line sensitivity was 569.5×10^-6/V in a supply voltage range of 1.2~1.8 V,and the power supply rejection ratio(PSRR)was 66.5 dB at 100 Hz.The power dissipation was only 187.4 nW. |
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| Keywords: | low power all-CMOS sub-threshold current reference |
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