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反应磁控溅射Cu-Al-O薄膜的结构和光电学性质研究
引用本文:肖荣辉,邓晶晶,余碧霞.反应磁控溅射Cu-Al-O薄膜的结构和光电学性质研究[J].三明高等专科学校学报,2014(6):62-65.
作者姓名:肖荣辉  邓晶晶  余碧霞
作者单位:三明学院机电工程学院,福建三明365004
基金项目:三明学院科研基金项目(B201110/Q)
摘    要:反应磁控溅射方法在玻璃基片上沉积Cu-Al-O薄膜,并对薄膜进行退火处理,研究溅射功率和退火温度对薄膜结构和光电学性质的影响。用X射线衍射仪、分光光度计等仪器对薄膜的性质进行表征,采用拟合正入射透射谱数据计算薄膜的厚度。结果表明:不同溅射功率条件下制备的薄膜为非晶态,透射率在近红外部分达到60%以上,电阻率随溅射功率的增加呈U型变化,在120 W附近,电阻率达到极小值;退火后,薄膜的XRD谱出现Cu4O3、Cu O和Al2O3的混合相,薄膜透射率有所提高,电阻率随退火温度的提高而先增大后减小。

关 键 词:Cu-Al-O薄膜  溅射功率  退火温度  光学性质  电学性质

Study on the Structural,Optical and Electrical Properties of Cu-Al-O Thin Films Deposited by Reactive Magnetron Sputtering
XIAO Rong-hui,DENG Jing-jing,YU Bi-xia.Study on the Structural,Optical and Electrical Properties of Cu-Al-O Thin Films Deposited by Reactive Magnetron Sputtering[J].Journal of Sanming College,2014(6):62-65.
Authors:XIAO Rong-hui  DENG Jing-jing  YU Bi-xia
Institution:(School of Mechanical and Electric Engineering, Sanming University, Sanming 365004, China)
Abstract:Cu-Al-O films were deposited by reactive magnetron sputtering on glass substrates ,and annealed in atmosphere. Influence of sputtering power and annealing temperature on structure and photoelectric properties of the films were investigated. X-ray diffractometer and spectrophotometer was used to characterize the properties ,thickness of the film is calculated by fitting the normal incidence transmission spectrum data. The results show that as-prepared films with different sputtering power are amorphous,the transmittance of the films near infrared part reaches above 60%,the resistivity are U type change with the increase of sputtering power,and reaches a minimum value at 120 W. The mixed phase of Cu4O3,CuO and Al2O3 was detected by the XRD in the films after annealing,the transmittance is higher than as-deposited thin films,the resistivity showed the first increase and then decrease with the increase of annealing temperature.
Keywords:Cu-Al-O films  sputtering power  annealing temperature  optical properties  electrical properties
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