| 一种线性可控全集成SiGe BiCMOS驱动放大器 |
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| 引用本文： | 严琼,武永华.一种线性可控全集成SiGe BiCMOS驱动放大器[J].三明学院学报,2014(4):75-78. |
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| 作者姓名： | 严琼 武永华 |
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| 作者单位： | 福建江夏学院电子信息科学学院,福建福州350108 |
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| 基金项目： | 福建省中青年教师教育科研项目（JA1332） |
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| 摘 要： | 基于Jazz工艺,提出一种线性可控全集成Si Ge Bi CMOS驱动放大器（DRA）,实现多种可调功率增益放大作用。电路采用全差分共射共基结构,通过调节CMOS电流镜偏置电路和Si Ge-HBT管尺寸以及3bit控制位,实现1d B步长的可控增益。仿真结果显示：在10μA的带隙基准电流源以及3.3V的电源电压下,DRA实现八种可调功率增益,其线性度指标即输出1d B压缩点OP1d B〉3d Bm,电路供电电流〈10m A,且电路输入输出匹配良好（S11与S22均小于-19d B）。
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| 关 键 词： | BiCMOS 驱动放大器(DRA) 线性度 增益可控 |
A High-linearity Gain-controlled Fully Integrated SiGe BiCMOS Driver Amplifier |
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| YAN Qiong,WU Yong-hua.A High-linearity Gain-controlled Fully Integrated SiGe BiCMOS Driver Amplifier[J].Journal of Sanming University,2014(4):75-78. |
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| Authors: | YAN Qiong WU Yong-hua |
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| Institution: | (College of Electronics and Information Science, Fujian Jiangxia University, Fuzhou 350108, China) |
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| Abstract: | A high-linearity gain-controlled fully integrated Si Ge Bi CMOS driver amplifier is proposed based on Jazz process, and the gain-controlled driver amplifier with many kinds of power gain is realized. In the circuit, a fully differential cascode structure is used and the proposed DRA can achieve the gain step of 1d B by adjusting the CMOS current-mirror bias circuit, the size of Si Ge-HBT and the 3 control bits. The simulation results show that under the 10 u A bandgap reference current source and 3.3V supply voltage, the proposed DRA can realize the gain-controlled function with 8 kinds of power gain.The linearity of DRA, that is, output 1d B compression point shows OP1 d B〉 3d Bm, the power supply current 10 m A with good input and output matching（S11 and S22 are both less than-19 d B）. |
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| Keywords: | Bi CMOS driver amplifier（DRA） linearity gain-controlled |
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