| 常压MOCVD法制备TiO_2薄膜及性质研究 |
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| 引用本文： | 苑举君,张宪科,余华军,谢应茂.常压MOCVD法制备TiO_2薄膜及性质研究[J].赣南师范学院学报,2012,33(3):22-24. |
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| 作者姓名： | 苑举君 张宪科 余华军 谢应茂 |
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| 作者单位： | 赣南师范学院物理与电子信息学院,江西赣州341000 赣南师范学院光电子材料与技术研究所,江西赣州341000 |
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| 基金项目： | 江西省教育厅青年基金项目，吉林大学超硬材料国家重点实验室开放课题资助项目 |
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| 摘 要： | 利用常压MOCVD法在Si及Al2O3衬底上制备了TiO2薄膜.研究了沉积温度和退火温度对TiO2薄膜结构和形貌的影响,以及TiO2薄膜的光学性质.研究发现,沉积温度为600℃时,制备的TiO2薄膜结构为锐钛矿相,薄膜质量较高.TiO2薄膜在1 090℃高温退火后,薄膜结构完全转变为金红相.TiO2薄膜在可见区域有着高达90%以上透射率,在紫外区域有着强烈的吸收.
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| 关 键 词： | TiO2薄膜 MOCVD 锐钛矿 金红石 光学性质 |
The Fabrication and Characterization of AP-MOCVD Titanium Dioxide Films |
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| YU Jvjuna,b,ZHANG Xiankea,b,YU Huajuna,b,XIE Yingmao.The Fabrication and Characterization of AP-MOCVD Titanium Dioxide Films[J].Journal of Gannan Teachers' College(Social Science(2)),2012,33(3):22-24. |
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| Authors: | YU Jvjuna b ZHANG Xiankea b YU Huajuna b XIE Yingmao |
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| Institution: | a,b(a.School of Physics and Electronic Information; b.Institute of Optoelectronic Materials and Technology,Gannan Normal Univesity,Ganzhou 341000,China) |
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| Abstract: | The TiO2 film is fabricated on Si and Al2O3 substrates by atmospheric pressure metal organic chemical vapor deposition(AP-MOCVD).The effects of grown temperature and anneal temperature on the crystal structure and morphology of TiO2 film are researched and the optical quality of TiO2 film is also investigated.The researches show that anatase TiO2 film is fabricated at 600 ℃ with a higher quality.After a high anneal temperature(1 090 ℃),the anatase TiO2 film is turned to rutile TiO2 film.The TiO2 film has a high of more than 90 % transmittance in the visible region and has a strong absorption in the ultraviolet region. |
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| Keywords: | TiO2 film MOCVD anatase rutile optical quality |
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