| IGBT在离子注入机中的应用问题 |
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| 引用本文： | 蔡先武,田小海.IGBT在离子注入机中的应用问题[J].中国科技信息,2006(12):297-299. |
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| 作者姓名： | 蔡先武 田小海 |
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| 作者单位： | 中国电子科技集团公司第四十八研究所,410111 |
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| 摘 要： | 本文结合强流氧离子注入机中电源实例,对绝缘栅双极晶体管（IGBT）的特性、短路安全工作区、栅极驱动和可靠保护分别进行了论述.提出了一种完善的栅极驱动和保护方案.
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| 关 键 词： | 强流氧离子注入机 栅极驱动 保护 |
THE APPLICATION OF IGBT IN ION IMPLANTER |
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| CAI Xianwu,TIAN Xiaohai.THE APPLICATION OF IGBT IN ION IMPLANTER[J].CHINA SCIENCE AND TECHNOLOGY INFORMATION,2006(12):297-299. |
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| Authors: | CAI Xianwu TIAN Xiaohai |
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| Institution: | The 48th Reseach Institute of the Electronic Technology Group of China Changsha 410111 |
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| Abstract: | In the paper, combined with the practical power supply of high current implanter ,the character, SCSOA, gate-drive and reliable protection of the Insulation Gate Bipolar transistor(IGBT) are describeed respectively.the paper presents a perfect method of gate drive and protect |
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| Keywords: | IGBT SOI SCSOA |
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