| 一种DDR信号阻抗匹配的新方法 |
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| 引用本文： | 王征.一种DDR信号阻抗匹配的新方法[J].宁波职业技术学院学报,2012(5):13-14,45. |
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| 作者姓名： | 王征 |
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| 作者单位： | 陕西工业职业技术学院 |
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| 摘 要： | DDR信号的阻抗匹配一般有两种方法:源端增加串联电阻和终端增加并联电阻。这两种方法各有利弊。其中源端串阻匹配会增加单板PCB的布板面积,终端并联匹配则会增加单板的功耗。本文则采用并联电容来替代并联电阻,这样即可以解决PCB布板面积的问题,也可以解决单板机功耗增加的问题,是DDR信号匹配的一种新方法。
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| 关 键 词： | DDR 信号 阻抗匹配 |
New method of DDR signal impedance matching |
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| WANG Zheng.New method of DDR signal impedance matching[J].Journal of Ningbo Polytechnic,2012(5):13-14,45. |
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| Authors: | WANG Zheng |
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| Institution: | WANG Zheng(Shaanxi Polytechnic Institute,Xianyang 712000,China) |
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| Abstract: | There are two ways of DDR signal impedance marching:add the series-resistance in the source or add the shunt-resistance in the terminal.The two methods have their advantages and disadvantages.Source matching will increase the PCB plate area.Terminal matching will increase the power.This paper uses the shunt-capacitor to replace the shunt-resistance,which can solve the problem of PCB layout area,and the problem of single board power increased.It is a new method of DDR signal impedance matching. |
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| Keywords: | DDR signal impedance marching |
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