首页 | 本学科首页   官方微博 | 高级检索  
     检索      

混合集成电路中金铝键合可靠性的实验设计
引用本文:畅兴平.混合集成电路中金铝键合可靠性的实验设计[J].襄樊学院学报,2011,32(8):36-40.
作者姓名:畅兴平
作者单位:襄樊学院物理与电子工程学院,湖北襄阳,441053
摘    要:针对混合集成电路中粗铝丝与厚膜金导体所形成的Al/Au键合系统的可靠性,提出了样品在加速应力(150℃)条件下的实验方案,得出在125℃、150℃、175℃三种加速温度应力条件下样品电阻的变化率随高温储存时间线性增加,但当Al/Au系统的互连接触电阻变化率达到20%后,电阻的变化率即退化速率显著增加;在恒定温度应力下,Al/Au键合系统的退化主要表现为接触电阻增加,键合强度下降.

关 键 词:混合集成电路  Al/Au键合  寿命评价  加速实验

DOE for Reliability of Gold-Aluminum Bonding in HIC
CHANG Xing-ping.DOE for Reliability of Gold-Aluminum Bonding in HIC[J].Journal of Xiangfan University,2011,32(8):36-40.
Authors:CHANG Xing-ping
Institution:CHANG Xing-ping (Physics & Electronics Information Technology Department,Xiangfan University,Xiangyang 441053,China)
Abstract:Based on the reliability of the Al/Au bonding system, it proposed a experiment scheme with the acceleration stress of 150℃. It shows that the rate of change increases with the increase of time variation under high temperature storage. When the rate of change of interconnection contact resistance in Al/Au system achieved 20%, the rate of change of the resistance increased obviously; Under the constant temperature stress, the contact resistance increased and the linkage intensity dropped.
Keywords:Hybrid integrated circuits(HIC)  Al/Au bonding  Life assessment  Accelerated test
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号