| 半导体PN结测温实验的设计 |
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| 引用本文： | 彭庶修,吴汉水,占俐琳.半导体PN结测温实验的设计[J].实验技术与管理,2007,24(2):29-31. |
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| 作者姓名： | 彭庶修 吴汉水 占俐琳 |
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| 作者单位： | 景德镇陶瓷学院,物理实验中心,江西,景德镇,333403 |
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| 摘 要： | 讨论了半导体PN结的温度特性及其测温实验的设计。可将此内容改编成工科大学物理设计性实验项目。
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| 关 键 词： | PN结 测温 实验设计 |
| 文章编号： | 1002-4956（2007）02-0029-03 |
| 收稿时间： | 2006-03-21 |
| 修稿时间： | 2006年3月21日 |
Design of semiconductor P-N Junction temperature- measuring experiment |
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| PENG Shu-xiu,WU Han-shui,ZHAN Li-lin.Design of semiconductor P-N Junction temperature- measuring experiment[J].Experimental Technology and Management,2007,24(2):29-31. |
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| Authors: | PENG Shu-xiu WU Han-shui ZHAN Li-lin |
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| Institution: | Physical Experiment Center, Jingdezhen Ceramic Institute, Jingdezhen 333403, China |
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| Abstract: | The article discusses the temperature characteristics of semiconductor P-N junction,and the design of its temperature-measuring experiment is also introduced.The content can be adapted to a designing experiment programme in college physics education. |
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| Keywords: | P-N junction temperature-measuring experiment design |
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