| 基于集群磁流变单晶碳化硅基片抛光加工的工艺研究简 |
| |
| 引用本文： | 童和平.基于集群磁流变单晶碳化硅基片抛光加工的工艺研究简[J].广东广播电视大学学报,2014(1):109-112. |
| |
| 作者姓名： | 童和平 |
| |
| 作者单位： | 广东理工职业学院,广东广州510091 |
| |
| 摘 要： | 基于集群磁流变效应超光滑平面抛光理论及试验装置对单晶碳化硅基片进行了平面抛光试验，结果表明，金刚石磨料对单晶Sic基片具有较高的材料去除率；加工间隙在1．5I砌左右具有较好的加工效果，随着加工时间的延长表面粗糙度越来越小，且30min内表面粗糙度变化率达到89％以上。通过优化工艺参数对单晶SiC进行集群磁流变平面抛光，发现经过30min加工，表面粗糙度Ra从42．1m下降到4．2nm，表明集群磁流变效应平面抛光用于加工单晶SiC基片可行且效果显著。
|
| 关 键 词： | 单晶碳化硅 集群磁流变效应 抛光加工 |
Study on Technology Monocrystalline SiC Substrate Polishing of the Clusters MR |
| |
| TONG He-ping.Study on Technology Monocrystalline SiC Substrate Polishing of the Clusters MR[J].Journal of Guangdong Radio & Television University,2014(1):109-112. |
| |
| Authors: | TONG He-ping |
| |
| Institution: | TONG He-ping ( Guangdong Polytechnic Institute, Guangzhou, Guangdong, China, 510091 ) |
| |
| Abstract: | Based on cluster MR polishing effect, ultra-smooth surface polishing theory and test equipment lbr single crystal silicon carbide substrates were tested. The results showed that the diamond abrasive SiC single crystal substrate having a high material removal rate; machining gap has good processing results in about 1.5mm, with the extension of the surface roughness of less and less processing time, and the inner surface of 30rain roughness of the rate of change of more than 89%. By optimizing process parameters on single crystal SiC were clustered MR polishing flat and ultra-depth digital microscope by Malta and Germany observed roughness and surface roughness of the workpiece surface morphology before and after processing, the surface roughness was tbund after 30min Ra from 42. lnm down to 4.2nm. Results of the surface, the cluster MR effect for the processing of flat polished monocrystalline SiC substrate is feasible and effective and the results are remarkable. |
| |
| Keywords: | silicon carbide cluster MR effect polishing |
| 本文献已被 CNKI 维普 等数据库收录！ |
