| Bi_（5-x）Nd_xTiNbWO_（15）共生铁电陶瓷的微观结构和介电特性研究 |
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| 引用本文： | 王晓娟.Bi_（5-x）Nd_xTiNbWO_（15）共生铁电陶瓷的微观结构和介电特性研究[J].常熟理工学院学报,2011,25(2):35-38. |
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| 作者姓名： | 王晓娟 |
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| 作者单位： | 常熟理工学院物理与电子工程学院; |
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| 基金项目： | 常熟理工学院青年教师科研启动基金(ky2009108)资助项目 |
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| 摘 要： | 利用传统的固相烧结工艺制备了Bi5-xNdxTiNbWO15（x=0.00～0.75）共生铁电陶瓷样品.通过X射线衍射、Raman散射光谱以及介电损耗测量研究了样品的微观结构和介电特性.X射线衍射谱表明,所有样品都是单一的Bi系层状钙钛矿共生结构,没有出现杂相.Raman散射光谱分析表明,在掺杂量为0.00～0.75范围内,Nd离子只取代了A位的Bi离子,并没有进入Bi2O2层.从介电损耗随温度变化谱上（f=100kHz）可以看到：Nd掺杂能有效降低材料的损耗值.这可能是由于掺杂元素Nd的稳定性较好,降低了材料中缺陷的浓度,从而减小了介电损耗.
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| 关 键 词： | 共生 Raman散射 介电损耗 |
Study on Microstructure and Dielectric Properties of Bi_(5-x)Nd_xTiNbWO_(15) Intergrowth Ferroelectrics |
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| WANG Xiao-juan.Study on Microstructure and Dielectric Properties of Bi_(5-x)Nd_xTiNbWO_(15) Intergrowth Ferroelectrics[J].Journal of Changshu Institute of Technology,2011,25(2):35-38. |
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| Authors: | WANG Xiao-juan |
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| Institution: | WANG Xiao-juan(School of Physics and Electronics Engineering,Changshu Institute of Technology,Changshu 215500,China) |
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| Abstract: | Bi5-xNdxTiNbWO15(x=0.00～0.75)intergrowth ferroelectrics were prepared by the conventional solid-state reaction method.Their microstructure and dielectric properties were studied using X-ray diffraction(XRD),Raman scattering spectra and dielectric loss measurement.The XRD analysis showed that all the samples were single-phase intergrowth bismuth layered perovskite structure.The Raman scattering analysis implied that only the Bi3+ at A site not(Bi2O2)2+ layers were substituted by Nd3+ at the substitution area of 0.00～0.75.The dielectric loss-temperature spectra(f=100kHz) showed that Nd substitution decreased the dielectric loss effectively.This may be due to its good thermal stability of Nd and the defect density was decreased. |
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| Keywords: | intergrowth Raman dielectric loss |
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