| 一种应用于DRM/DAB频率综合器的宽带低相位噪声LC压控振荡器(英文) |
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| 引用本文： | 雷雪梅,王志功,王科平.一种应用于DRM/DAB频率综合器的宽带低相位噪声LC压控振荡器(英文)[J].东南大学学报,2010(4):528-531. |
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| 作者姓名： | 雷雪梅 王志功 王科平 |
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| 作者单位： | [1]东南大学射频与光电集成电路研究所,南京210096 [2]内蒙古大学电子信息工程学院,呼和浩特010021 |
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| 摘 要： | 介绍了一种应用于DRM/DAB频率综合器的宽带低相位噪声低功耗的CMOS压控振荡器.为了获得宽工作频带和大调谐范围,在LC谐振腔里并联一个开关控制的电容阵列.所设计的压控振荡器应用中芯国际的0.18μm RF CMOS工艺进行了流片实现.包括测试驱动电路和焊盘,整个芯片面积为750μm×560μm.测试结果表明,该压控振荡器的调谐范围为44.6%,振荡频率范围为2.27～3.57GHz.其相位噪声在频偏为1MHz时为-122.22dBc/Hz.在1.8V的电源电压下,其核心的功耗为6.16mW.
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| 关 键 词： | CMOS压控振荡器 开关电容阵列 MOS可变电容 宽带 低相位噪声 DRM/DAB频率综合器 |
A wideband low-phase-noise LC VCO for DRM/DAB frequency synthesizer |
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| Lei Xuemei,Wang ZhigongWang Keping.A wideband low-phase-noise LC VCO for DRM/DAB frequency synthesizer[J].Journal of Southeast University(English Edition),2010(4):528-531. |
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| Authors: | Lei Xuemei Wang ZhigongWang Keping |
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| Institution: | 1Institute of RF-＆ OE-ICs,Southeast University,Nanjing 210096,China)(2 School of Electronic and Information Engineering,Inner Mongolia University,Hohhot 010021,China) |
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| Abstract: | The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency synthesizer.In order to obtain a wide band and a large tuning range,a parallel switched capacitor bank is added in the LC tank.The proposed VCO is implemented in SMIC 0.18-μm RF CMOS technology and the chip area is 750 μm×560 μm,including the test buffer circuit and the pads.Measured results show that the tuning range is 44.6%;i.e.,the frequency turning range is from 2.27 to 3.57 GHz.The measured phase noise is-122.22 dBc/Hz at a 1 MHz offset from the carrier.The maximum power consumption of the core part is 6.16 mW at a 1.8 V power supply. |
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| Keywords: | CMOS voltage-controlled oscillator switched capacitor bank MOS varactors wideband low phase noise DRM/DAB frequency synthesizer |
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