| 单层VCl3和VBr3中相互作用导致的量子反常霍尔绝缘体到莫特绝缘体相变 |
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| 作者姓名： | 徐永峰 胜献雷 郑庆荣 |
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| 作者单位： | 1. 中国科学院大学物理科学学院, 北京 100049;
2. 北京航空航天大学物理系 微纳测控与低维物理教育部重点实验室, 北京 100191 |
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| 基金项目： | Supported by the National Natural Science Foundation of China(11574309,11504013) |
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| 摘 要： | 基于第一性原理计算，发现在不考虑3d电子间关联作用的情况下，二维单层材料VCl3和VBr3是面内铁磁半导体，并且具有量子反常霍尔效应。VCl3能隙约为3.4 meV，VBr3没有全局的能隙。有趣的是，VCl3的陈数为3，有3个手性边缘态；VBr3的陈数为1，对应1个手性边缘态。当考虑关联作用U后，它们会变为Mott绝缘体。对于VCl3，相变点发生在U=0.45 eV；对于VBr3，相变点发生在U=0.35 eV。
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| 关 键 词： | 铁磁半导体 大陈数 Mott绝缘体 |
| 收稿时间： | 2019-03-26 |
| 修稿时间： | 2019-05-08 |
Correlation-driven topological phase transition from quantum anomalous Hall insulator to Mott insulator in monolayer VCl3 and VBr3 |
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| Authors: | XU Yongfeng SHENG Xianlei ZHENG Qingrong |
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| Institution: | 1.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;2.Key Laboratory of Micro-Nano Measurement-Manipulation and Physics of Ministry of Education, Department of Physics, Beihang University, Beijing 100191, China |
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| Abstract: | Based on the first-principle calculations, we propose that the monolayer VCl3 and VBr3 are quantum anomalous Hall insulators with in-plane magnetization without considering the correlation effect of the 3d electron-electron interaction. The band gap is predicted to be about 3.4 meV for VCl3, but no global gap for VBr3. It is interesting to note that VCl3 (VBr3) possesses a Chern number of C=3 (C=1) with three (one) chiral edge states. After considering correlation effect, we obtain Mott insulator if U>0.45 (U>0.35) eV for VCl3 (VBr3). |
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| Keywords: | ferromagnetic semiconductor large Chern number Mott insulator |
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