| 激光辐照单晶硅样品的研究 |
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| 引用本文： | 许丽,黄伟其,辛荣.激光辐照单晶硅样品的研究[J].雁北师范学院学报,2007(4). |
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| 作者姓名： | 许丽 黄伟其 辛荣 |
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| 作者单位： | 贵州大学贵州省光电子技术与应用重点实验室 贵州大学贵州省光电子技术与应用重点实验室 贵州贵阳 贵州贵阳 贵州教育学院物理系 |
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| 基金项目： | 国家自然科学基金资助项目[10547006] |
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| 摘 要： | 将功率为30W、波长为1064nm的YAG激光束(束斑直径0.045mm)照射在硅样品表面打出小孔,在孔内的侧壁上有很特殊的网孔状结构,其中的网孔壁厚为纳米尺度,解释孔侧壁网孔状结构的机理.孔侧壁上的网孔状结构有很强的受激荧光发光效应,发光峰中心约在700nm处.当样品在加工和检查过程中保持脱氧状态时,其样品几乎没有发光,证实了氧在PL发光增强上起着重要作用.我们用量子受限及其纳晶与氧化硅界面态复合的综合模型来解释其光致发光的增强机理
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| 关 键 词： | 激光辐照 网孔壁 光致荧光增强 |
Study on Silicon Crystal by Irradiation of Laser |
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| XU Li ,HUANG Wei-qi ,Xin Rong.Study on Silicon Crystal by Irradiation of Laser[J].Journal of Yanbei Teachers College,2007(4). |
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| Authors: | XU Li HUANG Wei-qi Xin Rong |
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| Institution: | XU Li 1,HUANG Wei-qi 1,2,Xin Rong1 |
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| Abstract: | A kind of hole-net structure can be formed in the wall of the hole on silicon sample irradiated with laser of power 30W and wavelength 1064nm.The photoluminescence emission is enhanced in the hole-net structure.The PL peak center is about 700nm.During preparing process the oxidation-free,Silicon sample does not almost emit.It is identified through experiments that the oxide on the sample may be the most important fact in the enhancing effect of the PL emission.We use the trap states of the interface between SiO2and nanocrystal model to explain the increasing PL emission in the hole-net structure. |
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| Keywords: | laser irradiation hole-net structure photoluminescence enhancement |
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