| 低相位噪声Σ-Δ小数频率合成器 |
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| 引用本文： | 于云丰,叶甜春,马成炎,乐建连,甘业兵.低相位噪声Σ-Δ小数频率合成器[J].中国科学院研究生院学报,2010,27(6):782-787. |
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| 作者姓名： | 于云丰 叶甜春 马成炎 乐建连 甘业兵 |
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| 作者单位： | 1. 中国科学院微电子研究所, 北京 100029;
2. 杭州中科微电子有限公司, 杭州 310053 |
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| 基金项目： | 国家"863"项目(2007AA12Z344)资助 |
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| 摘 要： | 为使Σ-Δ小数频率合成器获得低带内相位噪声,在设计中调制器采用一种5阶4bit输出的单环Σ-Δ调制器,比3阶MASH(Multi-stAge noise-SHaping)结构有着更低的带内量化噪声.一款具有低带内相位噪声和快速锁定特点的2.6GHz Σ-Δ小数频率合成器在0.25μm CMOS工艺中实现.测试结果显示,该频率合成器在40KHz频率偏移处相噪-86.5dBc/Hz,杂散小于-65dBc.在2.5V的电源供电下,电流为25.5mA,整个芯片面积3.9mm2(核心电路面积0.63mm2).
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| 关 键 词： | Σ-Δ调制器 频率合成器 MASH CMOS 锁相环 |
| 收稿时间： | 2009-12-09 |
| 修稿时间： | 2010-05-11 |
A Σ-Δ fractional-N frequency synthesizer with low in-band phase noise |
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| YU Yun-Feng,YE Tian-Chun,MA Cheng-Yan,YUE Jian-Lian,GAN Ye-Bing.A Σ-Δ fractional-N frequency synthesizer with low in-band phase noise[J].Journal of the Graduate School of the Chinese Academy of Sciences,2010,27(6):782-787. |
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| Authors: | YU Yun-Feng YE Tian-Chun MA Cheng-Yan YUE Jian-Lian GAN Ye-Bing |
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| Institution: | 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2. Hangzhou Zhongke Microelectronics Co Ltd, Hangzhou 310053, China |
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| Abstract: | In order to achieve low in-band phase noise in Σ-Δ fractional-N frequency synthesizers, a 5th-order 4bit Σ-Δ modulator is used to replace a 3rd-order MASH modulator. A 2.6GHz Σ-Δ fractional-N frequency synthesizer with low in-band phase noise and fast-locking characteristics was implemented in 0.25μm CMOS process. The measurement results show that the in-band phase noise of this synthesizer is -86.5dBc/Hz (at 40KHz offset), and all the spurs are less than - 65dBc. The whole synthesizer excluding the Σ-Δ modulator consumes 25.5mA in the case of 2.5V supply, and it occupies 3.9mm2(with a core area of 0.63mm2). |
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| Keywords: | &Sigma -&Delta modulator frequency synthesizer MASH CMOS PLL |
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