| 采用绝缘体上的半导体技术制备集成的多模干涉型光耦合器和光开关 |
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| 作者姓名： | 余金中 魏红振 严清峰 夏金松 张小峰 |
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| 作者单位： | 中国科学院半导体研究所集成光电子学国家重点实验室, 北京 100083 |
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| 摘 要： | 在光学系统中,SOI(绝缘体上的半导体)上制备集成的MMI(多模干涉)型光耦合器已成为一种愈来愈引人注目的无源器件.由于Si和SiO2之间具有大的折射率差,在SOI波导中可以采用SiO2薄膜(＜1.0μm)作限制层,这与超大规模集成电路工艺相兼容.描述了采用SOI技术制备集成的MMI型光耦合器和光开关的设计和制造结果.业已证实,2×2 MMI-MZI(多模干涉-麦赫-曾德干涉)型热光开关的开关时间小于20μs.
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| 关 键 词： | 绝缘体上的半导体 多模干涉 光耦合器 光开关 集成光学 |
| 收稿时间： | 2001-09-19 |
| 修稿时间： | 2002-05-18 |
Integrated MMI Optical Couplers and Optical Switches in Silicon-on-Insulator Technology |
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| Authors: | Yu Jinzhong Wei Hongzhen Yan Qinfeng Xia Jinsong Zhang Xiaofeng |
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| Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Integrated multimode interference (MMI) coupler based on silicon-on-insulator(SOI) has been becoming a kind of more and more attractive device in optical systems. SiO2 thin cladding layers (＜1.0 μm) can be usedin SOI waveguide due to the large index step be-tween Si and SiO2, making them compatible with VLSI technology. The design and fabrica-tion of MMI optical couplers and optical switches in SOI technology are presented in thepa-per. We demonstrated the switching time of 2 × 2 MMI-MZI thermo-optical switch is less than 20 μs. |
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| Keywords: | SOI MMI optical coupler optical switch integrated optics |
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