| X波段宽带低噪声放大器设计 |
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| 作者姓名： | 谢涛 周以国 郭俊栋 |
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| 作者单位： | 中国科学院电子学研究所，北京 100080 |
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| 摘 要： | 介绍与实现了一种X波段宽带低噪声放大器（LNA）。该放大器选用NEC公司的低噪声放大管NE3210S01（HJFET），采用微带分支线匹配结构和两级级联的方式。利用ADS软件进行设计、优化和仿真。最后研制的放大器在10-13GHz范围内增益为（21.5±1）dB，噪声系数小于2 dB，驻波比小于1.8。
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| 关 键 词： | 低噪声放大器 NE3210S01 噪声系数 |
Design of an X Band Broadband Low Noise Amplifier |
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| Authors: | XIE Tao ZHOU Yi-guo GUO Jun-dong |
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| Institution: | Institute of Electronics Chinese Academy of Sciences, Beijing 100080, China |
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| Abstract: | An X band broadband low noise amplifier (LNA) is presented. This amplifier, using NEC’s HJFET NE3210S01, had a microstrip stub matching structure and a two-stage topology. ADS was used as a tool to design, optimize and simulate. The designed amplifier exhibited broadband operation from 10GHz-13GHz with noise figure less than 2dB, Gain 21.5dB±1dB and SWR less than 1.8. |
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| Keywords: | LNA NE3210S01 Noise Figure |
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