| Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide |
| |
| 作者姓名： | 徐玄前 叶辉 邹桐 |
| |
| 作者单位： | State Key Laboratory of Modern Optical Instrumentation Zhejiang University Hangzhou 310027 China，State Key Laboratory of Modern Optical Instrumentation Zhejiang University Hangzhou 310027 China，State Key Laboratory of Modern Optical Instrumentation Zhejiang University Hangzhou 310027 China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China (No. 60478039) and the Natural Science Foundation of Zheji-ang Province (No. X405002), China |
| |
| 摘 要： | INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th…
|
| 关 键 词： | 波导 直流磁控管溅射沉积薄膜 氮化钛 SBN MgO TiN Si |
| 收稿时间： | 2005-07-20 |
| 修稿时间： | 2005-12-03 |
Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide |
| |
| Xuan-qian Xu,Hui Ye,Tong Zou.Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide[J].Journal of Zhejiang University Science,2006,7(3):472-476. |
| |
| Authors: | Xuan-qian Xu Hui Ye Tong Zou |
| |
| Institution: | (1) State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, 310027, China |
| |
| Abstract: | Optimal parameters for depositing Titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN
thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures, different
electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the
thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured
by a four-point probe. In the result, temperature is 500 °C, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom
electrodes.
Project supported by the National Natural Science Foundation of China (No. 60478039) and the Natural Science Foundation of
Zhejiang Province (No. X405002), China |
| |
| Keywords: | Titanium nitride (TiN) Thin film Sputtering Orientation Waveguide |
| 本文献已被 CNKI 维普 万方数据 SpringerLink 等数据库收录！ |
