Effect of annealing on wet etch of amorphous IGZO thin film |
| |
| Authors: | CHEN Long-long SHI Ji-feng LI Qian LI Xi-feng ZHANG Jian-hua |
| |
| Institution: | Key Laboratory of Advanced Display and System Application(Shanghai University), Ministry of Education, Shanghai 200072, P. R. China |
| |
| Abstract: | Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated.The results show that etch rate of IGZO films decrease with the increase of annealing temperature.Etching taper angle is less than 60° and critical dimension (CD) loss is less than 1 μm in over-etching time of 30 s.The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) array process. |
| |
| Keywords: | amorphous InGaZnO (a-IGZO) annealing etching |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
