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排序方式: 共有88条查询结果,搜索用时 28 毫秒
1.
The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process.The device shows a field effect mobility of 0.43 cm 2 /(V·s),on/off ratio of 7.5×10 6 and threshold voltage of 0.87 V.The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface.The present a-Si TFT array with SiN x insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) te...  相似文献   
2.
介绍一种用晶体二极管组装的演示器,利用它可以很好地做电磁振荡演示实验和讲解原理。  相似文献   
3.
在硅锗合金衬底上采用氧化等制膜方式生成零维和二维的纳米结构样品,用高精度椭偏仪(HPE)、卢瑟福背散射谱仪(RBS)和高分辩率扫描透射电子显微镜(HR—STEM)测量样品的纳米结构.并采用美国威思康新州立大学开发的Rump模拟软件进行精细结构模拟.并测量出样品横断面锗纳米团簇和纳米层的PL谱。在硅锗合金的氧化层表面中首次发现纳米锗量子点组成的几个纳米厚的盖帽膜结构.首次提出的生成硅锗纳米结构的优化加工条件的氧化时问和氧化温度匹配公式的理论模型与实验结果拟合得很好.  相似文献   
4.
V-MOS管发电机调节器结构简单方便,无移动触点。价格低廉,适用于国内各种汽车。电压不超过12V,功率不超过350W即可。调节器由三极管BG和场效应管V-MOS开头电路。调节励磁绕组LQ的励磁电压来调节输出电压。  相似文献   
5.
UHV/CVD生长SiGe/Si材料分析及应用研究   总被引:1,自引:1,他引:0  
以Si2H6和GeH4为生长气源,采用UHV/CVD系统在Si(100)衬底上生长了Sil—xGex合金和Sil—xGex/Si多量子阱结构。采用X射线双晶衍射仪、扫描电子显微镜和原子力显微镜等仪器设备对样品的组份、界面和表面形貌等晶体质量进行了研究。SiGe合金中Si和Ge摩尔分数的比值随着Si2H6和GeH4流量比的增加按比例线性增加,比例因子为2.57。生长的Si0.88Ge0.12合金样品的界面清晰,表面平整,平均粗糙度仅为0.4nm,位错密度低于104/cm2。六周期Si0.88Ge0.12/Si多量子阱的X射线双晶衍射摇摆曲线中存在多级卫星峰和Pendellosung条纹。这些结果表明SiGe合金和SiGe/Si多量子阱均具有很好的晶体质量。  相似文献   
6.
Since the beginning of the COVID-19 pandemic, students have endured drastic changes in educational routines. Such disruptions can be especially challenging for students who struggle with executive functioning, self-regulation and emotion regulation, such as students with autism spectrum disorder (ASD), attention deficit hyperactivity disorder (ADHD) and bipolar disorder. Using a framework of trauma-informed instruction, the authors supported classroom teachers in implementing sensory spaces for students with ASD, ADHD and bipolar disorder. The project included professional development and funding for teachers to develop, procure and offer sensory tools and strategies to assist students in recognising and managing emotions. The authors collected data on the effectiveness of the sensory supports, combining teacher surveys and student behaviour data. Results indicated increased teacher knowledge on trauma-informed instruction and use of sensory supports to promote executive functioning and self-regulation and decreased target behaviours in students based on structured observation and anecdotal teacher feedback.  相似文献   
7.
A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.  相似文献   
8.
制备了结构为:ITO/PEDOT:PSS/P3HT+PCBM/LiF/Al的有机太阳能电池,研究退火对电池性能的影响,实验发现:经过60 min 150℃退火处理后,器件开路电压(Vo)c为0.57 V,短路电流密度(Js)c达到6.32 mA.cm-2,填充因子(FF)达到0.55,光电转换效率(ηp)达到2.01%,器件性能明显提高。探讨了退火对电池性能影响的内在原因。  相似文献   
9.
提出绘制晶体管基本放大电路的交流通路和微变等效电路的基本步骤,该方法过程规范易掌握,且可以得到规范的平面电路。同时还明确指出计算放大电路交流指标时应以BJT的ib或FET的vgs为公共变量列写各个信号表达式。  相似文献   
10.
1 Introduction Organic semiconductors are receiving considerableattention due to their remarkable advantages especiallyvarious manufacturing methods ,lowcost and plentifulmaterials .Ebisawa ,et al.[1]fabricated the first poly-mer-based transistor in 1983 . Since then,lots of re-search works have been done in the filed of organicmaterial-based transistors .It was reported that organicthin-fil m transistor ( OTFT) fabricated by usingorganic semiconductor material copper-phthalocyanine(CuPc)[2…  相似文献   
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