共查询到20条相似文献，搜索用时 156 毫秒
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窄禁带半导体碲镉汞薄膜主要用于研制红外焦平面列阵器件,在航天航空红外遥感、军事国防、气象、资源、环境、医学和科学仪器等领域有重要应用。碲镉汞薄膜和焦平面器件制备在国际上被公认为具有极大的难度和挑战性,相关的光电子物理的研究也更为丰富和复杂,特别是在光吸收跃迁效应方面还有重要问题没有解决。本项目主要解决了碲镉汞薄膜的光电跃迁以及材料器件有关的光电子物理的基本科学问题,促进碲镉汞薄膜材料和红外焦平面器件制备,解决国家对红外焦平面重大需求的科学基础问题。主要发现如下:(1)发现碲镉汞最完整的带间跃迁本征吸收光… 相似文献
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用电子束蒸镀方法在250℃~450℃的衬底温度范围内在单晶Si衬底(111)晶面上成功生长了Zn0.85Co0.14Cu0.01O薄膜,并研究了衬底温度对薄膜质量的影响,结果表明:当衬底温度为400℃时,外延膜取向性最好,且其(002)衍射峰半高宽最窄,仅为0.408°。 相似文献
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用电子束蒸镀方法在250℃～450℃的衬底温度范围内在单晶Si村底(111)晶面上成功生长了Zn0.85 Co0.14 Cu0.01O薄膜,并研究了衬底温度对薄膜质量的影响,结果表明:当衬底温度为400℃时,外延膜取向性最好,且其(002)衍射峰半高宽最窄,仅为0.408°. 相似文献
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以豌豆为实验材料,采用水培方法研究了硒对汞、镉复合污染下的豌豆种子萌发与生长的影响．结果显示,在种子萌发时,硒对汞、镉复合污染有缓解作用;一种浓度的汞、镉复合污染有其对应的最适硒浓度,使缓解作用最明显;1mg／L的硒对3mg／L的汞、镉浓度解毒效应最显著;表现为提高细胞分裂指数,降低胚根细胞畸变率;提高叶绿素含量;使PoD的活性降低． 相似文献
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二氧化钒(VO2)薄膜作为一种可循环相变材料,非常有前景作为节能材料用于智能窗的设计.论文采用脉冲激光沉积法通过控制衬底温度可以在非晶玻璃衬底上沉积结晶度良好的VO2复合膜,研究CuAg缓冲层对沉积VO2薄膜的结构及光学性能的影响发现：缓冲层沉积厚度会影响VO2薄膜结构,也会对薄膜的光学性能有不同程度的调节.当CuAg缓冲层厚度为10 nm时,复合薄膜的光学性能最好,在发生绝缘态-金属态相变时,既能提高可见光透过率,又能降低近红外光透过率,还能保持太阳能调节率在一个高的参数值. 相似文献
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通过脉冲激光沉积,于Si(001)单晶衬底上在550℃的衬底温度下生长了LaNiO3／Pb(Zr0．52Ti0．48)O3／LaNiO3/SrtiO3/TiN/Si异质结构。利用四圆x射线分析了该多层膜结构中各层曲轴向外延关系。 相似文献
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用电化学阳极氧化法制备了一定孔隙率的多孔硅样品,然后用脉冲激光沉积法以PS为衬底生长一层ZnS薄膜.用X射线衍射仪、扫描电子显微镜和荧光分光光度计分别表征了ZnS薄膜的结构、形貌和ZnS/PS复合膜的光致发光性质.XRD结果表明,制备的ZnS薄膜沿β-ZnS(111)方向择优生长,结晶质量良好,但衍射峰的半峰全宽较大;SEM图像显示,ZnS薄膜表面出现一些凹坑,这是衬底PS的表面粗糙所致.室温下的光致发光谱表明,沉积ZnS薄膜后,PS的发光峰蓝移.把ZnS的蓝绿光与PS的橙红光叠加,在可见光区450~700 nm形成了一个较宽的光致发光谱带,ZnS/PS复合膜呈现较强的白光发射. 相似文献
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MBE growth of ZnSxSe1-x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1-x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290℃. Both AFM and TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1-x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional micrograph showing a well defined columnar structure. 相似文献
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利用磁控溅射法在玻璃基片上制备Zn095Ca005O薄膜,用X射线衍射（XRD）研究薄膜的结构特性,用LS920荧光光谱仪测量了样品薄膜的PL谱,探讨了衬底温度对薄膜结晶质量和光学性质的影响。研究发现,衬底温度对薄膜的质量影响较小,450℃时制备的薄膜结晶质量最好;不同衬底温度对发光峰强度有影响;薄膜在可见光区显示出较高的透过性,在350－400nm范围内薄膜透过率骤然下降,在该范围内存在吸收边。 相似文献
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为了简化制作工艺,使温度分布均匀以及降低功耗,设计了一种基于MEMS制造工艺的悬臂共面式SnO2气体传感器.使用有限元法对这种传感器及膜结构堆积于硅基底上的封闭膜式气体传感器进行了稳态热分析,结果表明悬臂共面式传感器拥有更均匀的温度分布和更低的功耗.当最高温度为383℃时功耗仅为7mW,敏感薄膜上的温差低于14℃.为解决悬臂易碎的问题,提出了一种新的制造工艺,该过程在正面刻蚀SiO2层形成悬臂结构前沉积SnO2敏感薄膜,并采用深反应离子刻蚀的方法对硅基底进行体刻以避免湿法刻蚀对传感器表面的化学污染.整个过程总共需要4块掩模板.采用旋涂法溶胶凝胶法将掺有Fe离子的SnO2薄膜沉积于基底上作为敏感元件.该器件对氢气表现出了良好的气敏性能,随着氢气浓度从50×10-6上升到2000×10-6,灵敏度逐渐提高,在2000×10-6时的灵敏度为30. 相似文献
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Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively. 相似文献
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INTRODUCTION Liquid crystal light valves (LCLV) are devices whose function is to convert an input image pos-sessing specific wavelength, intensity and coher-ence to an output image in which some or all of these parameters are varied (Efron et al., 1985). Therefore, they can be used as image amplifiers for large screen projection display, image wavelength converters and incoherent-to-coherent image converters for optical data processing and correlation. The appli-cation potentialities ar… 相似文献
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The structural characteristics and optical and electrical properties of molecular-beam-epitaxy (MBE) grown ZnS0.8Se0.2 thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. The X-ray diffraction (XRD)results indicated that high quality polycrystalline ZnS0.8Se0.2 thin film grown at the optimized temperature had a preferred orientation along the (111) planes. The transmission electron microscopy (TEM) cross-sectional micrograph of the sample showed a well defined columnar structure with lateral crystal dimension in the order ofa few hundred angstroms. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W had been demonstrated and for wavelengths longer than 450 nm, the response was down from the peak response by more than 3 orders of magnitude. The thin ZnS0.8Se0.2 photosensor layer, with a wide energy gap and anisotropic electrical property, makes a transmission UV liquid crystal light valve ( LCLV) with high resolution feasible. 相似文献
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MBE growth of ZnSxSe1−x thin films on ITO coated glass substrates were carried out using ZnS and Se sources with the substrate temperature ranging
from 270°C to 330°C. The XRD σ/2σ spectra resulted from these films indicated that the as-grown polycrystalline ZnSxSe1−x thin films had a preferred orientation along the (111) planes. The evaluated crystal sizes as deduced from the FWHM of the
XRD layer peaks showed strong growth temperature dependence, with the optimized temperature being about 290 °C. Both AFM and
TEM measurements of these thin films also indicated a similar growth temperature dependence. High quality ZnSxSe1−x thin film grown at the optimized temperature had the smoothest surface with lowest RMS value of 1.2 nm and TEM cross-sectional
micrograph showing a well defined columnar structure.
Project supported by the National Science Council of PRC (No. 59910161981) and RGC grant from the Hong Kong Government under
Grant (No. NS-FC/HKUST 35) 相似文献
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有机电致发光薄膜的电流输运机理的分析 总被引：2，自引：0，他引：2
用TPD做空穴传输层,8－羟基喹啉铝做发光层,制备了有机薄膜器件,测量了其电致发光特性;分析了该器件的电流输运机理,认为该有机薄膜器件在电致发光时流过器件的电流受热电子注入效应、空间电荷限制效应、隧穿效应及器件电阻效应的影响。 相似文献
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Aluminum nitride (AIN) thin films with high c-axis orientation have been prepared on a glass substrate with an A1bottom electrode by radio frequency (RF) reactive magnetron sputtering. Based on the analysis of Berg's hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AIN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AIN thin film with prefer-ential (002) orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction (XRD) analysis, the full width at half maximum (FWHM) of AIN (002) was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AIN thin film. With other parameters held constant, any increase or decrease in N2 con-centration results in an increase in the FWHM of AIN. 相似文献