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1.
Thermal Response Test by Improved Test Rig with Heating or Cooling Soil   总被引:1,自引:1,他引:0  
An improved test rig providing both the heat and cold source was used to perform thermal response test(TRT), and the line source model was used for data analysis. The principle of determining the temperature difference between the inlet and outlet of test well can keep the heating or cooling rate constant, along with a reduced size of test rig. Among the influencial factors of the line source model, the temperature difference was determined as the most important, which agreed with the test results. When the gravel was taken as the backfill material, the soil thermal conductivities of heating and cooling at the test place were 1.883 W/(m·K) and 1.754 W/(m·K), respectively, and the deviation of TRT between heating and cooling soil was 6.8%. In the case of fine sand, the thermal conductivities of heating and cooling were 1.541 W/(m·K) and 1.486 W/(m·K), respectively, and the corresponding deviation was 6%. It was also concluded that different velocities of water had less influence on TRT than the temperature difference.  相似文献   

2.
In this paper, we present a two-dimensional numerical analysis of the conjugate natural convection and radiation heat transfer in a double-space enclosure with two semitransparent walls. Two kinds of boundary conditions are considered, the first being the isothermal process of the opaque wall, and the other the incidence of a constant radiation flux in the left semitransparent wall. The renormalization group k – ε model is adopted to simulate the turbulent flow in the enclosure. To compute the radiation heat transfer in a semitransparent medium, the discrete ordinates model is used. We compare the behaviors of enclosures with single and double semitransparent walls and determine the difference in the results obtained for semitransparent and opaque partitions. The results indicate that a semitransparent partition facilitates a reduction in the heat loss or obtains a higher temperature distribution. The transmittance of a semitransparent wall has a great effect on the thermal and flow characteristics in an enclosure. The change of wall temperature is found to be significant when the thermal conductivity values range from 0.05 to 0.5 W/(m·K), and to be small when ranging from 0.5 to 10 W/(m·K). These conclusions are helpful for green design and energy saving in solar buildings.  相似文献   

3.
A homogeneous crack-free nano- or meso-porous silica films on silicon was fabricated by colloidal silica sol derived by hydrolyzing tetraethyl orthosilicate (TEOS) catalyzing with (C4H9)4N OH- in water medium. The solution with ratio of H2O/TEOS≥15, R4N and glycerol as templates, combining with the hydrolyzed intermediate, controlled the silica aggregating; the templated silica film with heterostructure was developed into homogeneous nano-porous then meso-porous silica films after being annealed from 750 ℃ to 850 ℃; the formation mechanism of the porous silica films was discussed; morphologies of the silica films were characterized. The refractive indexes of the porous silica films were 1.256-1.458, the thermal conductivity < 0.7 W/m/K. The fabricating procedure and the sequence had not been reported before.  相似文献   

4.
INDRODUCTIONMeso-poroussilicafilmswithanexcellentheat-insulatingpropertyandtherelativelylowdielectricvalueplayparticularlyimportantroleinelectronicandmagneticdevices(Moonetal.,1997),etc.;thosewithporesizesof5nmto50nmarealsoofinterestforapplicationsinphotonics,optoelec-tronics,lightweightstructuralmaterialthermalin-sulation,opticalcoating(Moonetal.,1997;HusingandSchulert,1998;Davis,2002).Theirspecialnetworkstructureisusedinsounddetector(HusingandSchubert,1998);theirexcellentinsulatingpro…  相似文献   

5.
High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 type thin film chip resistors when the deposition time was about 11 min and deposition films were annealed at 500 ℃ for 120 min.The morphologies of Cr-Si-TaAl film surfaces were examined by scanning electron microscopy(SEM).The analysis suggests that Ta and Al may be distributed in CrSi2 film with mixed form of several structures(e.g.,bridge-like,capillary-like or island-like structures),and such a structure distribution is responsible for high film resistance and low TCR of Cr-Si-Ta-Al film.  相似文献   

6.
Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), semiconductor parameter analyzer and spectrophotometry, respectively. The influence of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10−2 Ω·cm2, which suggests that a good ohmic contact exists between In2O3: Sn (ITO) and IGZO film.  相似文献   

7.
The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process.The device shows a field effect mobility of 0.43 cm 2 /(V·s),on/off ratio of 7.5×10 6 and threshold voltage of 0.87 V.The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface.The present a-Si TFT array with SiN x insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) te...  相似文献   

8.
INTRODUCTION Metal hydrides are special alloys which absorb and desorb hydrogen reversibly. At room temperature, metal hydrides could absorb as much hydrogen as liquid hydrogen of the same volume under much lower pressure and much higher temperature (Güther and Otto, 1999). Massive reaction heat is generated accompanying this reaction, which could be used for waste heat recovery, solar energy utilization and re-frigeration with no side effect to environment (Izhvanov et al., 1996). Con…  相似文献   

9.
INTRODUCTIONThemicrostructureofthinfilmsplaysacru cialroleinawidevarietyofphysicalprocesses.Thereareclearevidencesthatmanyphysicalpropertiesofathinfilmvarydramaticallyasitsmicrostructurechanges (Hausetal.,1 987) .Forinstance,roughsubstratescanbeusedtofabric…  相似文献   

10.
A new aluminum thin film percolation system, deposited on glass and silicon wafer surfaces by a vapor deposition method, was investigated. By using the expansive and mobile behaviors of the silicone oil, the Al films are quenched gradually by the silicone oil during the deposition process. TheR-I behavior of the film system was studied, and the anomalous conductivity indicated that, at very low current, the hopping and tunneling effects in the films are much stronger than those of the normal film systems. Project supported by NSFC (Grant No. 19874016) and the Special Fund of Zhejiang Provincial Natural Science Foundation for Young Scientists (Grant No. 1997-RC9603).  相似文献   

11.
A 3D ultrasound thermal model with a 3D finite element representation for modeling the thermal diffusion effects for hepatic ablation induced by spherical-section ultrasound phased array was developed. The model was first validated against available published measured data in rat liver. Using the validated model,effects of blood perfusion and heating schemes on lesion formation were studied for both single focus and split-focus intensity patterns. It was shown that for single focus sonication pattern the short-duration(~2 s) and high-intensity(~1250 W/cm2) heating scheme can completely reduce the cooling effect of the blood perfusion. The lesion shape and size were significantly altered by perfusion for split-focus pattern even with a rapid heating scheme when the focus spacing was larger than 2.4 mm. Underdosed areas might be present between two foci. Prolonging ex-posure time or shortening focus spacing can reduce the cool region between two foci. In addition,the influences of thermal and acoustic parameters were also studied. When the therapy depth is short(<5 cm) ,the lesion size monotonically increases with increasing attenuation coefficient that ranges from 5.4 to 11 Np/(m?MHz) .  相似文献   

12.
利用溶胶凝胶法在单晶LaAlO3(100)衬底上成功的制备了La0.7Pb0.3MnO3外延膜.用X射线衍射仪、直流四探针法对其结构及电特性进行了研究.结果表明,薄膜为赝立方钙钛矿结构,晶胞参数为a=3.907nm.电阻率随着温度的增加,从金属导电行为向半导体行为转变,转变温度为TP=336K,利用双交换理论对此现象作了合理的解释.其电阻率在低温区时满足ρ=ρ0+ρ1T2+ρ2T4.5,其导电机制主要是电子与电子的散射,在T〉TMI时主要是小极化子输运.  相似文献   

13.
Ba0.6Sr0.4TiO3 (BST) thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% (E max = 200 kV/cm), 22.40 at 10 6 Hz, respectively.  相似文献   

14.
Aluminum nitride (AlN)/borosilicate glass composites were prepared by the tape casting process and hot-press sintered at 950 ℃ with AIN and SiO2-B203-ZnO-Al2O3-Li2O glass as starting materials. We characterized and analyzed the variation of the microstructure, bulk density, porosity, dielectric constant, thermal conductivity and thermal expansion coefficient (TEC) of the ceramic samples as a function of AIN content. Results show that AIN and SiO2-B2O3-ZnO-Al2O3-Li2O glass can be sintered at 950 ℃, and ZnAI204 and Zn2SiO4 phase precipitated to form glass-ceramic. The performance of the ceramic samples was determined by the composition and bulk density of the composites. Lower AlN content was found redounding to liquid phase sintering, and higher bulk density of composites can be accordingly obtained. With the increase of porosity, corresponding decreases were located in the dielectric constant, thermal conductivity and TEC of the ceramic samples. When the mass fraction of AlN was 40%, the ceramic samples possessed a low dielectric constant (4.5-5.0), high thermal conductivity (11.6 W/(m.K)) and a proper TEC (3.0× 10^-6 K^-1 which matched that of silicon). The excellent performance makes this kind of low temperature co-fired ceramic a promising candidate for application in the micro-electronics packaging industry.  相似文献   

15.
A bench-scale experiment for control of hydrogen sulfide (H2S) emissions was carried out continuously for nearly four months by using bio-trickling filter packed with ZX01 stuffing. The results suggested that the bio-trickling filter had proven excellent performance over substantial operational periods. Removal efficiency of H2S was nearly 100% when volumetric loading of the bio-trickling filter varied from 0.64 g/(m3·h) to 38.20 g/(m3·h) and metabolism products of H2S were mainly composed of SO42–. When inlet concentration of H2S was 250 mg/m3, the optimum gas retention time was 30 s and the optimum spray water flow rate was 0.005 9~0.012 L/(cm2·h). The bio-trickling filter had good ability to resist shock of high volumetric loading, and was not blocked during experiments for nearly four months during which resistance was maintained at relatively lower value, so that the bio-trickling filter need not carry out back washing frequently and can be operated steadily for long-term.  相似文献   

16.
INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th…  相似文献   

17.
ZnNiO thin films with different contents of Ni (0–10 at.%) were fabricated on quartz and Si (100) substrates by pulsed laser deposition (PLD). We measured the samples by X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrometer (UV-VIS), and Hall testing. When the Ni contents were below 3 at.%, partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases, which enhanced the conductivity of the film. When the Ni contents were above 3 at.%, Ni ions were at the interstitial sites, and Ni-related clusters and defects were able to emerge in the films, resulting in a worsening of electrical and optical properties. A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.  相似文献   

18.
Aluminum nitride (AlN) thin films with high c-axis orientation have been prepared on a glass substrate with an Al bottom electrode by radio frequency (RF) reactive magnetron sputtering. Based on the analysis of Berg's hysteresis model, the improved sputtering system is realized without a hysteresis effect. A new control method for rapidly depositing highly c-axis oriented AlN thin films is proposed. The N2 concentration could be controlled by observing the changes in cathode voltage, to realize the optimum processing condition where the target could be fixed stably in the transition region, and both stoichiometric film composition and a high deposition rate could be obtained. Under a 500 W RF power of a target with a 6 cm diameter, a substrate temperature of 450 ℃, a target-substrate distance of 60 mm and a N2 concentration of 25%, AlN thin film with preferential (002) orientation was deposited at 2.3 μm/h which is a much higher rate than previously achieved. Through X-ray diffraction (XRD) analysis, the full width at half maximum (FWHM) of AlN (002) was shown to be about 0.28°, which shows the good crystallinity and crystal orientation of AlN thin film. With other parameters held constant, any increase or decrease in N2 concentration results in an increase in the FWHM of AlN.  相似文献   

19.
V2O5光电薄膜的溶胶——凝胶制备及性能研究   总被引:3,自引:1,他引:3  
以V2O5为原料,苯甲醇,异丁醇为溶剂,采用溶胶0-凝胶(Sol-Gel)工艺制备了V2O5薄膜。采用差热-失重(DTA-TG)、付里叶红外光谱(FT-IR)、X-射线衍射(XRD)等分析手段研究了V205薄膜的结构特性。并研究了V2O5薄膜的透射光谱、气敏、伏安特性及温阻特性。实验发现沉积在ITO导电玻璃衬底上的V2O5薄膜,烧结温度起高,透光性能越好;V2O5薄膜在常温下对NOx气体具有一定的气敏性能。  相似文献   

20.
1Introduction Generally,ultrafiltration(UF)asaseparationtech nologyofhighefficiencyandlowenergyconsumption haswidelybeenappliedinvariousindustries.Inin dustrialapplications,therearesixbasicUF modules[1]:(1)tubular,withinnerchannel diameters>4mm;(2)hollowfibers,withinnerdia metersof0.2-3mm;(3)plateunits;(4)spiral woundmodules;(5)pleated sheetcartridges;and(6)rotarymodules.However,hollowfiberUFmoduleis oneofmostimportantmodulesbecauseofitshigh areapackingdensity.Besides,UFtechnologyalsois us…  相似文献   

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