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1.
ＩＮＴＲＯＤＵＣＴＩＯＮＣｏｎｓｔｒｕｃｔｉｏｎｃｏｓｔｃｏｎｔｒｏｌｉｓｉｍｐｏｒｔａｎｔａｃｔｉｖｉｔｙｆｏｒｅｆｆｉｃｉｅｎｔｍａｎａｇｅｍｅｎｔｏｆａｃｏｎｓｔｒｕｃｔｉｏｎｐｒｏｊｅｃｔ.Ａｃｏｓｔｃｏｎｔｒｏｌｓｙｓｔｅｍｍｕｓｔｂｅｄｅｓｉｇｎｅｄｔｏｃｏｎｔｒｏｌｗｅｌｌｔｈｅｃｏｎｓｔｒｕｃｔｉｏｎ (ＷａｎｇＳｈｏｕ ｑｉｎｇ,1 996) .Ｔｈｉｓｓｙｓｔｅｍｓｈｏｕｌｄｂｅｐｒｏｖｉｄｅｄｗｉｔｈｔｈｅｆｕｎｃｔｉｏｎｔｏｌｅｔｔｈｅｐｒｏｊｅｃｔｍａｎａｇｅｒｋｎｏｗｔｈｅｃｕｒ… 相似文献
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1 Ｉｎｔｒｏｄｕｃｔｉｏｎ Ｂｅｃａｕｓｅｏｆｔｈｅｃｏｍｂｉｎａｔｉｏｎｏｆａｎｕｍｂｅｒｏｆｆａｖｏｒａｂｌｅｐｒｏｐｅｒｔｉｅｓ,ｓｕｃｈａｓｈｉｇｈｈａｒｄｎｅｓｓ,ｈｉｇｈｃａｒｒｉｅｒｍｏｂｉｌｉｔｙａｎｄｂｒｅａｋｄｏｗｎｖｏｌｔａｇｅ,ｌａｒｇｅｂａｎｄｇａｐ ,ｌｏｗｄｉｅｌｅｃｔｒｉｃｃｏｎｓｔａｎｔ,ａｎｄｔｒａｎｓｐａｒｅｎｃｙｔｏｖｉｓｉｂｌｅｌｉｇｈｔ,ＩＲｌｉｇｈｔａｎｄｍｉｃｒｏｗａｖｅｓ,ｅｔｃ.[1] ,ｄｉａｍｏｎｄｆｉｌｍｈａｓｂｅｅｎｃｏｎｓｉｄｅｒ ａｂｌｙｐｒｏｍ… 相似文献
3.
EFFECT OF CORROSION ON BOND BEHAVIOR AND BENDING STRENGTH OF REINFORCED CONCRETE BEAMS 总被引：1，自引：0，他引：1
ＩＮＴＲＯＤＵＣＴＩＯＮＴｈｅｒｅｉｓｇｒｏｗｉｎｇｃｏｎｃｅｒｎｆｏｒｃｏｒｒｏｓｉｏｎｄａｍ ａｇｅｉｎｒｅｉｎｆｏｒｃｅｄｃｏｎｃｒｅｔｅ (ＲＣ)ｓｔｒｕｃｔｕｒｅｓｗｉｔｈｓｅｖｅｒａｌｄｅｃａｄｅｓ’ｓｅｒｖｉｃｅ.Ｔｈｅｒｅｉｎｆｏｒｃｅｍｅｎｔｃｏｒ ｒｏｓｉｏｎｏｆＲＣｃｏｎｓｔｒｕｃｔｉｏｎｓｐｒｏｂａｂｌｙｉｓｔｈｅｍｏｓｔｓｉｇｎｉｆｉｃａｎｔｐｒｏｂｌｅｍａｎｄｏｕｔｗｅｉｇｈｓｏｔｈｅｒｆｏｒｍｓｏｆｄｅｔｅｒｉｏｒａｔｉｏｎ .ＳｔｕｄｉｅｓｂｙＰｅａｔｔｉｅｅｔａｌ.( 1 9… 相似文献
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ＩＮＴＲＯＤＵＣＴＩＯＮＩｎｔｈｉｓｐａｐｅｒ,ｗｅｃｏｎｓｉｄｅｒｔｈｅｆｏｌｌｏｗｉｎｇｃｏｎ ｖｅｘｑｕａｄｒａｔｉｃｐｒｏｇｒａｍｍｉｎｇｍｉｎｆ(ｘ) =12 ｘＴＱｘ ｃＴｘｓ.ｔ.Ａｘ≤ｂ ,ｘ≥ 0( 1 )ｗｈｅｒｅｃ ,ｘａｒｅｎ ｖｅｃｔｏｒｓ,ｂｉｓａｎｍ ｖｅｃｔｏｒ,ＡｉｓａｍａｔｒｉｘａｎｄＱｉｓａｓｙｍｍｅｔｒｉｃｐｏｓｉｔｉｖｅｓｅｍｉ ｄｅｆｉｎｉｔｅｍ×ｎｍａｔｒｉｘ .Ｔｈｅｆｏｒｍｏｆ( 1 )ｄｏｅｓｎｏｔｌｏｓｅｇｅｎｅｒａｌｉｔｙ ,ｂｅｃａｕｓｅａｎｙｐｅｑｕａｌｉｔｙｃｏｎ ｓｔ… 相似文献
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1 Ｉｎｔｒｏｄｕｃｔｉｏｎ Ｇｅｎｅｒａｌｌｙｓｐｅａｋｉｎｇ ,ｐｒｏｄｕｃｔｃｏｎｃｕｒｒｅｎｔｄｅｓｉｇｎｉｓｌｏ ｃａｌｉｚｅｄｗｉｔｈｉｎｅｎｔｅｒｐｒｉｓｅｓ .Ｗｉｔｈｔｈｅｉｎｃｅｓｓａｎｔｄｅｖｅｌ ｏｐｍｅｎｔｏｆＩｎｔｅｒｎｅｔａｎｄｗｅｂ ｂａｓｅｄａｐｐｌｉｃａｔｉｏｎｔｅｃｈ ｎｉｑｕｅｓ,ｈｏｗｅｖｅｒ ,ｉｔｉｓｕｒｇｅｎｔｌｙｎｅｅｄｅｄｔｏｃｏｐｅｗｉｔｈｔｈｅｐｒｏｂｌｅｍｓｏｆｐｒｏｄｕｃｔｃｏｎｃｕｒｒｅｎｔａｎｄｃｏｌｌａｂｏｒａｔｉｖｅｄｅｓｉｇｎｉｎｄｉｓｃ… 相似文献
6.
FANG Zheng hua YIN Ren he Zakaria A. ZHANG Li Department of Chemistry College of Science Shanghai University Shanghai China 《上海大学学报(英文版)》2001,(2)
1 Ｉｎｔｒｏｄｕｃｔｉｏｎ Ｉｔｉｓｋｎｏｗｎｔｈａｔｔｈｅｐｒｏｔｅｃｔｉｏｎｅｆｆｉｃｉｅｎｃｙｏｆｚｉｎｃｉｓｐａｒｔｉａｌｌｙａｓａｒｅｓｕｌｔｏｆｆｏｒｍｉｎｇａｐｒｏｔｅｃｔｉｖｅｆｉｌｍｏｎａｂａｓｅｍｅｔａｌ,ｓｕｃｈａｓｓｔｅｅｌ.Ａｌｔｈｏｕｇｈｐｕｒｅｚｉｎｃｃｏａｔｉｎｇｐｒｏｖｉｄｅｓｓｏｍｅｄｅｇｒｅｅｏｆｐｒｏｔｅｃｔｉｏｎｆｏｒｔｈｅｓｕｂｓｔｒａｔｅ ,ｚｉｎｃｉｓｃｏｎｓｕｍｅｄｒａｐｉｄｌｙｉｎａｓｅｖｅｒｅｃｏｒｒｏｓｉｏｎｅｎｖｉ ｒｏｎｍｅｎｔ.Ｃｏｎｓｅ… 相似文献
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ＩＮＴＲＯＤＵＣＴＩＯＮＣｏｍｍｕｎｉｃａｔｉｖｅｃｏｍｐｅｔｅｎｃｅ ,ａｎｏｔｉｏｎｐｒｏｐ ｏｓｅｄｂｙＨｙｍｅｓ(1 972 )ａｎｄｏｔｈｅｒｓａｓａｃｈａｌｌｅｎｇｅｔｏＣｈｏｍｓｋｙ ｓ (1 965)ｃｏｎｃｅｐｔｏｆｌｉｎｇｕｉｓｔｉｃｃｏｍ ｐｅｔｅｎｃｅ,ｈａｓｎｏｗｂｅｃｏｍｅａｐｒｉｍａｒｙｔｈｅｏｒｅｔｉｃａｌｃｏｎｓｔｒｕｃｔｉｎｓｏｃｉｏｌｉｎｇｕｉｓｔｉｃｓａｎｄａｎｕｍｂｅｒｏｆｒｅ ｌａｔｅｄｄｉｓｃｉｐｌｉｎｅｓ,ｅｓｐｅｃｉａｌｌｙｆｏｒｒｅｓｅａｒｃｈｉｎｇｉｎｔｏｔｈｅｒｅ… 相似文献
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ＩＮＴＲＯＤＵＣＴＩＯＮＯｎ ｌｉｎｅｓｅｐａｒａｔｉｏｎａｎｄｐｒｅｃｏｎｃｅｎｔｒａｔｉｏｎｈａｖｅｒｅｃｅｉｖｅｄｃｏｎｓｉｄｅｒａｂｌｅａｔｔｅｎｔｉｏｎｉｎｆｌｏｗｉｎｊｅｃｔｉｏｎａｎａｌｙｓｉｓｃｏｕｐｌｅｄｗｉｔｈａｔｏｍｉｃａｂｓｏｒｐｔｉｏｎｓｐｅｃ ｔｒｏｍｅｔｒｙｄｕｒｉｎｇｒｅｃｅｎｔｙｅａｒｓａｎｄｉｓｗｉｄｅｌｙａｐ ｐｌｉｅｄｆｏｒｓｅｌｅｃｔｉｖｉｔｙａｎｄｓｅｎｓｉｔｉｖｉｔｙｅｎｈａｎｃｅｍｅｎｔ(Ｆａｎｇ ,1 995 ) .Ａｕｔｏｍａｔｉｏｎｏｆｔｈｅｓａｍｐｌｅｐ… 相似文献
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ＨｉｓｔｏｒｉｃａｌＲｅｖｉｅｗＯｎＴｈｅＰｓｙｃｈｏｌｏｇｉｃａｌＡｐｐｒｏａｃｈｅｓＵｎｄｅｒｌｙｉｎｇＭｏｔｉｖａｔｉｏｎａｌＲｅ ｓｅａｒｃｈ .Ｗｅｗｉｌｌｃｏｎｓｉｄｅｒｔｈｒｅｅｇｅｎｅｒａｌａｐｐｒｏａｃｈｅｓｔｏｍｏｔｉｖａｔｉｏｎ :ｂｅｈａｖｉｏｕｒｉｓｍ ,ｃｏｇｎｉｔｉｖｅａｎｄｓｏｃｉａｌｃｏｎｓｔｒｕｃｔｉｖｉｓｔ .1.ＢｅｈａｖｉｏｕｒｉｓｔＡｐｐｒｏａｃｈ :ＢｅｈａｖｉｏｕｒｉｓｔｓｌｉｋｅＳｋｉｎｎｅｒｏｒＷａｓｔｏｎｗｏｕｌｄｓｔｒｅｓｓｔｈｅｒｏｌｅｏｆｒｅｗａｒ… 相似文献
11.
Xi-qiang Li 《上海大学学报(英文版)》2000,4(2):163-166
Single crystal Ga
x
In1−x
As films have grown up on GaAs(100) substrate at 375°C and on InP(100) substrate at 390°C, respectively, by the method of
rf-sputtering with using undoped GalnAs polycrystal as target. However, on Si(100) or Si(111) substrates at 260–390°C, even
at 465°C, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and
optical properties of the Ga
x
In1−x
As films were investigated using X-ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion
analyzer of X-ray (EDAX), Hall measurements and spectroscopic ellipsometry. 相似文献
12.
采用溶胶凝胶(sol-gel)法,在普通载玻片上成功制备ZnO薄膜,对于不同退火温度样品采用X射线衍射仪(XRD)、原子力显微镜(AFM)、紫外可见分光光度计(UVS)及光致荧光光谱(PL)对样品的结构、形貌和光学特性进行表征.XRD谱表明在300℃、400℃、500℃退火处理的样品都有较好的c轴择优取向,而且随着退火温度的升高择优取向明显改善.透射谱中能观察到明显的ZnO吸收边.用AFM观察到的样品表面形貌表明,退火温度提高使样品表面更加平整,同时粒径变大.PL谱中在380nm附近可观察到明显发光峰. 相似文献
13.
采用磁控溅射方法在Si片沉积了Ti-50．9at％Ni形状记忆合金薄膜,并将薄膜分别在不同温度下进行退火．利用示差扫描量热方法（DSC）、X射线衍射仪（XRD）、透射电镜（TEM）研究了薄膜退火前后形貌、相变特征及应力随退火温度的变化．实验结果表明：溅射态薄膜为非晶态,其晶化温度范围为430℃-535℃,晶化同时伴随着Ti3Ni4相的析出;退火后的薄膜随着退火温度的升高,Rs、Af、Ms均呈上升趋势．薄膜的残余应力随着退火温度的增加而逐渐减少． 相似文献
14.
In 1972 ,KimandTakahashi[1] observedagiantsaturatedmagneticfluxdensity (Bs=2 .5 8T)whichwas 17%strongerthanthatofpureiron .BelievingthattheFe NfilmwasapolycrystallinemixtureofFeandα″ Fe16 N2 ,theydeducedthattheBsofα″ Fe16 N2 wouldbe2 .83Tfromthevolumeratioofα″ Fe16 N2 inthefilm .Sincethelargesaturatedfluxdensityisofimportance ,boththeoreticallyandfromthepointofviewofpracticalapplications,manyresearchershavemadegreateffortsandusedavarietyofmethodstosynthesizeα″ Fe16 N2 intobulkmat… 相似文献
15.
Huang Jing-yun Ye Zhi-zhen Lu Huan-ming Zhao Bing-hui Wang Lei Que Duan-lin 《浙江大学学报(A卷英文版)》2000,1(4):427-430
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system with reflection high energy electron diffraction (RHEED) was
introduced. The Si epilayers and SiGe strained-layers on three-inch Si (100) substrates were grown in this UHV/CVD system.
The substrate temperature during growth was from 550°C to 780°C. The properties of epilayers were characterized by high-resolution
cross-sectional transmission electron microscopy (TEM), double crystal X-ray diffraction (DCXRD), and spreading resistance
(SPR). A B-doped SiGe epilayer with uniform resistivity distribution was grown.
Project supported by NSFC and Science Commission Program of Zhejiang Province of China. 相似文献
16.
17.
采用化学溶液沉积法在Si(001)衬底上制备Ni0.7Zn0.3Fe2O4铁氧体薄膜,XRD谱表明样品具有单相的尖晶石结构;扫描电子显微镜结果表明样品平均颗粒尺寸随着退火温度的上升从10 nm增加到32 nm。NZFO铁氧体薄膜磁性能与退火温度有强烈的依赖关系,薄膜的矫顽力从退火温度为500℃时的25 Oe增加到900℃时的80 Oe,饱和磁化强度也由146emu/cm3增加到283 emu/cm3,这对于现代电子器件微型化有着非常重要的意义。 相似文献
18.
Low valence vanadium oxide（VO2-x） thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then processed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction technique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320℃ for 3 h, its phase transition temperature is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process. 相似文献
19.
以Si衬底上外延Ge薄膜为吸收区,研究了Si基Ge光电探测器的材料生长与器件制作工艺,并对材料晶体质量和器件性能进行表征分析。Ge薄膜是采用低温缓冲层技术在超高真空化学气相沉积系统上生长的。1μm厚Ge薄膜的表面仅出现纳米量级的岛,表面粗糙度只有1.5 nm。Ge薄膜的X射线衍射峰形对称,峰值半高宽低于100 arc sec。Ge薄膜中存在0.14%的张应变。Si基Ge光电探测器在-1 V偏压时暗电流密度为13.7 mA/cm2,在波长1.31μm处的响应度高达0.38 A/W,对应外量子效率为36.0%,响应波长扩展到1.6μm以上。 相似文献
20.
Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and thenannealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60nm. The deposition speed is 3nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300℃ for 10min and anneal at 600℃ for 1h. 相似文献