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Guest editorial     
Manufacturing technologies for making advanced micro systems have been developing in a rapid pace recently. Research progress towards nanosized structures and devices opens up a whole new horizon for miniaturized system integration. Advances in this field will have an enormous societal impact and economic benefit in areas such as information technology, energy, healthcare, and many more. There has been an enormous scientific and industrial interest in nanosized advanced technologies. The theories, tools and practices for the design, manufacturing and test of these systems are emerging. The aim of this special section is to capture some of the latest developments in integration technologies for the micro/nanosystems, with the following topics: Molecular and crystal assembly inside the carbon nanotube: encapsulation and manufacturing approachesElectroplating for high aspect ratio vias in PCB manufacturing: enhancement capabilities of acoustic streaming Local synthesis of carbon nanotubes for direct integra tion in Si microsystemsdesign considerations Waferlevel SLID bonding for MEMS encapsulation Effect of substrates and underlayer on CNT synthesis by plasma enhanced CVD These papers will briefly highlight important advance ments in manufacturing technologies of the micro/nano systems, and outline the blueprint of upcoming information technology revolution from the manufacturing point of view.  相似文献   
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Hermetic packaging is often an essential requirement to enable proper functionality throughout the device's lifetime and ensure the optimal performance of a micro electronic mechanical system (MEMS) device. Solid-liquid interdiffusion (SLID) bonding is a novel and attractive way to encapsulate MEMS devices at a wafer level. SLID bonding utilizes a low-melting-point metal to reduce the bonding process temperature; and metallic seal rings take out less of the valuable surface area and have a lower gas permeability compared to polymer or glass- based sealing materials. In addition, ductile metals can adopt mechanical and thermo-mechanical stresses during their service lifetime, which improves their reliability. In this study, the principles of Au-Sn and Cu-Sn SLID bonding are presented, which are meant to be used for wafer-level hermetic sealing of MEMS resonators. Seal rings in 15.24 cm silicon wafers were bonded at a width of 60 gin, electroplated, and used with Au-Sn and Cu-Sn layer structures. The wafer bonding temperature varied between 300 ℃ and 350 ℃, and the bonding force was 3.5 kN under the ambient pressure, that is, it was less than 0.1 Pa. A shear test was used to compare the mechanical properties of the interconnections between both material systems, in addition, important factors pertaining to bond ring design are discussed according to their effects on the failure mechanisms. The results show that the design ofmetal structures can significantly affect the reliability of bond rings.  相似文献   
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