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Characterization of a-Si:H/SiN multilayer waveguide polarization using an optical pumping application—LED 总被引：1，自引：1，他引：0
Mohd Saiful Dzulkefly Zan Isamu Kato Mohammad Syuhaimi Ab-Rahman Seri Mastura Mustaza 《浙江大学学报(A卷英文版)》2009,10(10):1421-1427
This paper describes the fabrication of a waveguide and the analysis of its polarization characteristics by applying light-emitting diode （LED） pumping lights to its surface. By using double tubed coaxial line （DTCL） microwave plasma chemical vapor deposition （MPCVD） equipment, an a-Si：H/SiN multilayer waveguide was fabricated whose thickness could be controlled at nanometer order. The main structural material of the waveguide sample consisted of a combination of layers of amorphous silicon hydrogen and silicon nitrate. Once the sample was ready, another major objective of the experiment was to analyze the polarization characteristics of the fabricated waveguide. The idea of the experiment was to analyze how the waveguide reacts when three types of LED （blue, yellow, and red） are radiated onto its surface. The results showed that the fabrication of the a-Si：H/SiN sample is successful. Most effective transmission results, which accord with the polarization characteristics analysis, were obtained. 相似文献
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INTRODUCTION Monocrystalline SBN (Strontium barium nio-bium, SrxBa1?xNb2O6, denoted SBNx?100, where 0.25≤x≤0.75) solid solution, is currently being inves-tigated as potential material for many micro-device applications, such as piezoelectric infrared detectors, piezoelectric, electro-optic modulators, and holo-graphic storage (Koch et al., 1998), because SBN has one of the largest known linear electro-optic coeffi-cients (r33=1300 pm/V for SBN75), two orders of magnitude larger th… 相似文献
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针对天线E面远区副瓣电平抬高现象对天线进行改进设计,寻求改善方向图E面远区副瓣电平的方法。通过建立辐射阵面的数学与物理模型对阵面幅度分布进行微调,最后利用遗传算法对阵面辐射单元进行优化,解决了方向图E面远区副瓣电平抬高的工程应用问题。 相似文献
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THYLIEN Lars BERGLIND Eilert 《浙江大学学报(A卷英文版)》2006,7(1):41-44
INTRODUCTION Photonics circuits or integrated optics circuits are currently orders of magnitude larger in physical dimensions than their electronic counterparts. Whereas FET type transistors have lengths on the order of 50 nm passive optical devices, even those based on photonics crystals have sizes on the order of wavelength of 1 μm. For active devices the sizes are even larger, essentially depending on the matrix element of the interaction of interest. Regarding the packing density de… 相似文献
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