共查询到20条相似文献，搜索用时 218 毫秒
1.
The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process.The device shows a field effect mobility of 0.43 cm 2 /(V·s),on/off ratio of 7.5×10 6 and threshold voltage of 0.87 V.The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface.The present a-Si TFT array with SiN x insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) te... 相似文献
2.
Based on the region model of lambda bipolar transistor （ LBT）, a dividing region theory model of PLBT is set up.simulated and verified. Firstly, the principal operations of different kinds of photoelectronic lambda bipolar transistor ,（ PLBT） are characterized by a simple circuit model. Through mathematical analysis of the equivalent circuit, the typical characteristics curve is divided into positive resistance, peak, negative resistance and cutoff regions. Secondly. by analyzing and simulating this model, the ratio of MOSFET width to channel length, threshold voltage and common emitter gain are discovered as the main structure parameters that determine the characteristic curves of PLBT. And peak region width, peak current value, negative resistance value and valley voltage value of PLBT can be changed conveniently according to the actual demands by modifying these parameters. Finally comparisons of the characteristics of the fabricated devices and the simulation results are made, which show that the analytical results are in agreement with the observed devices characteristics. 相似文献
3.
Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunction bipolar transistor （ HBT） is designed and fabricated. Molecule beam extension, selective wet chemical etching, common contact photolithography and metal lift-off technique are adopted in the process. The device has particular and distinct voltage-controlled negative differential resistance （NDR） and photo-controlled NDR. The highest peak-to-vally current rate of the voltage-controlled NDR is larger than 148 and the peak current varies with the increase of collector voltage. The device features high speed and high frequency characteristics derived from HBT and intrinsic bistability and self-latching characteristics due to NDR. A single dual-base HBT can be seen as an integration of NDR device, HBT and photoconductive device. Compared with common HBT,the groove is the key factor producing NDR. 相似文献
4.
A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively. 相似文献
5.
CHEN Xiao-fei ZOU Xue-cheng LIN Shuang-xi LIU Zheng-lin JIN Hai 《浙江大学学报(A卷英文版)》2007,8(8):1346-1350
An integrated laser diode driver(LDD) driving an edge-emitting laser diode was designed and fabricated by 0.35 μm BiCMOS technology. This paper proposes a scheme which combines the automatic power control loop and temperature com-pensation for modulation current in order to maintain constant extinction ratio and average optical power. To implement tem-perature compensation for modulation current,a novel circuit which generates a PTAT current by using the injecting base current of a bipolar transistor in saturation region,and alternates the amplifier feedback loop(closed or not) to control the state of the current path is presented. Simulation results showed that programmed by choice of external resistors,the IC can provide modu-lation current from 5 mA to 85 mA with temperature compensation adjustments and independent bias current from 4 mA to 100 mA. Optical test results showed that clear eye-diagrams can be obtained at 155 Mbps,with the output optical power being nearly constant,and the variation of extinction ratio being lower than 0.7 dB. 相似文献
6.
A micro-sized tube heat exchanger(MTHE) was fabricated, and its performance in heat transfer and pressure drop was experimentally studied. The single-phase forced convection heat transfer correlation on the sides of the MTHE tubes was proposed and compared with previous experimental data in the Reynolds number range of 500—1 800. The average deviation of the correlation in calculating the Nusselt number was about 6.59%. The entrance effect in the thermal entrance region was discussed. In the same range of Reynolds number, the pressure drop and friction coefficient were found to be considerably higher than those predicted by the conventional correlations. The product of friction factor and Reynolds number was also a constant, but much higher than the conventional. 相似文献
7.
Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated.The results show that etch rate of IGZO films decrease with the increase of annealing temperature.Etching taper angle is less than 60 and critical dimension (CD) loss is less than 1 μm in over-etching time of 30 s.The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) ... 相似文献
8.
YU Ling-min ZHU Chang-chun FAN Xin-hui QI Li-jun YAN Wen 《浙江大学学报(A卷英文版)》2006,7(11):1956-1960
INTRODUCTION The richness of fundamental phenomena and the potential applications in nano-technologies has ar- oused rapidly growing interest in nano-dimensional materials. Quasi-one-dimensional (1D) nano-semi- conductors in the form of nanowires and nanoribbons have recently been successfully fabricated in many laboratories and by many methods (Wu et al., 2004; Yang et al., 2005; Gan et al., 2004; Soumitra et al., 2006). To synthesize CdS nanowires, people have developed a series of sy… 相似文献
9.
The loads of shock wave effect on fabricated anti-blast wall and distribution law around the wall were investigated by using near surface explosion test method and FEM. The pressure-time histories and variety law on the foreside and backside of the anti-blast wall were adopted in the tests of variety of different explosion distances and dynamites, as well as in the comparison between the test and numeri-cal calculation. The test results show that the loads of shock wave effect on the anti-blast wall were es-sen-tially consistent with calculation results using criterion under surface explosion when explosion dis-tances exceed 2 m, the distribution of overpressure behind wall was gained according to variety law based on small-large-small. It is also demonstrated that the peak overpressure behind wall had com-monly appeared in wall height by 1.5—2.5 multiples, and the peak overpressures of protective building behind wall could be reduced effectively by using the fabricated anti-blast wall. 相似文献
10.
The Chinese side has once again demanded that the Japanese government take effective measures to correct its serious mistakes in the history textbook fabricated by rightist scholars. An official from the Chinese Foreign Ministry called in an official of the Japanese embassy here Wednesday at the request of the Chinese government, and handed a memorandum on the textbook issue. The 相似文献
11.
Three types of blue-violet light-emitting devices based on an exciton-confined structure have been prepared, in which different materials were used as emitting layers and hole-transporting layers. They had structures of ITO/CuPc/NPB/CPB/TPBi/Alq3/LiF/Al(DNC), ITO/CuPc/JO3/CBP/TPBi/Alq3/LiF/Al(DJC ) and ITO/CuPc/JO3/FNPD/TPBi/Alq3/LiF/Al(DJF). Here copper phthalocyanine (CuPc) acted as hole-injecting layer( HIL), N, N-bis-(1-naphthyl)-N, N-diphenyl-1. lbiphenyl-4-4-diamine(NPB) and J03 bole-transporting layers ( HTLs), 4,4‘-dicarbazolyl-1,1‘ -biphenyl (CBP) and FNPD as emitting layers( EMLs), N, arylbenzimidazoles (TPBi) as holeblocking layer ( HBL ), and tris(8-quinolinolato ) aluminium complex ( Alq3 ) as electron- transporting layer ( ETL). TPBi applied here is a good confinement to both charges and excitons, which make the devices emit blue-violet light originating from the emitter, CBP and FNPD. Their characteristics have also been investigated. The result shows that the device DNC based on NPB/CBP has the best performance among the three devices. The excellence of DNC is attributed to the better hole-transporting ability of NPB as compared with J03, and the better emitting ability of CBP as compared with FNPD, although the best matching of energy levels is found in the hole-transporting layer and emitting layer of the device DJP. 相似文献
12.
通过在底栅顶接触的喷墨打印有机薄膜晶体管的SiO2表面采用原子层沉积方式制备薄层的Al2O3修饰层,并与未修饰前进行比较,发现有源层在ALD-Al2O3修饰后的SiO2表面接触角大大变小,且喷墨打印的有源层线条变粗。而随着ALD-Al2O3修饰层厚度的增加,SiO2表面粗糙度变大。通过测试其电学性能,发现ALD- Al2O3修饰层厚度为1 nm时,OTFT的性能最好,与未修饰前相比,其迁移率提高了近8倍,而开关比提高约4个数量级。 相似文献
13.
文章按文献所述方法制备酞菁铜粉体,制备了酞菁铜膜电极,用循环伏安法研究了它的电化学性质。在0.1mol/L KCL＋0．01 mol/L[Fe(CN)6]3-的溶液中,酞菁膜电极上可以进行可逆的电荷传递,并对氧还原有催化作用。 相似文献
14.
In order to compare two kinds of blue electroluminescent materials,we have investigated two kinds of blue OLEDs with the similar structure ITO/CuPc/NPB/JBEM:perylene/Alq/Mg:Ag[device(J)] and ITO/CuPc/NPB/DPVBi:perylene/Alq/Mg:Ag[device(D)].The difference of luminance and efficiency was not obvious for the two devices,However,there was remarkable difference for their lifetime.The device(J) achieved longer half lifetime of 1035h at initial luminance of 100 cd/m^2,and that of device(D) was only255h,According to their energy level diagrams,the differentce of their stability may originate from different host materials in the two devices.It may be attributed to the better thermal stability of JBEM molecues than that of DPVBi.It is shown that JBEM may be a promising blue organic electroluminescent material with great stability. 相似文献
15.
硬盘系统一般采用气体润滑，以提高使用寿命和读写可靠性．本文讨论了多聚脂流体润滑的ＩＢＭ３３７０ 磁头／ 磁盘系统，以期提高磁记录密度．润滑模型中考虑了超薄流体润滑的剪薄效应，并用有限差分法对润滑方程进行求解．应用摄动理论建立了ＩＢＭ３３７０ 磁头／ 磁盘系统的动力学模型，分别对气体润滑和液体润滑的两自由度磁头的动力响应进行了仿真．仿真结果表明，在相同磁头倾角条件下，液膜润滑的磁头／ 磁盘的动力稳定性优于气体润滑的磁头／ 磁盘系统 相似文献
16.
陈庆红陈丙三张平山 《福建工程学院学报》2021,(6):515-519
通过分析不同特性的非均压高点环非仅为余弦函数压力分布,应用有限元分析软件,基于静态缩减法求解活塞环接触节点位移的数值方法,参考Arnold 径向压力分布表达式,得到引入压力分布形状系数,且适用于最大相对压力1 < im ≤ 2.22,呈卡腰葫芦形压力分布形状的活塞环压力分布表达式和自由形状的计算方法。通过实例验证,该计算方法达到活塞环设计要求。 相似文献
17.
针对混合集成电路中粗铝丝与厚膜金导体所形成的Al/Au键合系统的可靠性,提出了样品在加速应力(150℃)条件下的实验方案,得出在125℃、150℃、175℃三种加速温度应力条件下样品电阻的变化率随高温储存时间线性增加,但当Al/Au系统的互连接触电阻变化率达到20%后,电阻的变化率即退化速率显著增加;在恒定温度应力下,Al/Au键合系统的退化主要表现为接触电阻增加,键合强度下降. 相似文献
18.
王立明 《廊坊师范学院学报(自然科学版)》2009,9(4):56-59
对“旋转单摆”的运动进行研究,建立系统的动力学方程,用线性稳定性分析方法讨论平衡点附近邻域的稳定性,给出了系统静态分岔图和运动的相图,利用Jacobi椭圆函数得出不同转速下系统作周期运动的解析解,并绘出图形加以说明。 相似文献
19.
章银娥 《赣南师范学院学报》2014,(3):43-46
随着虚拟现实技术在教育教学中得到了广泛的应用,本文在此基础上利用3DS Max工具建立了学生公寓整个楼层建筑、阶梯、楼道、门等静态物体的几何模型,结合vrml中的Script脚本函数结点进行门、窗户、电风扇等物体的动态交互建模,进行了门与门、门与墙等之间的碰撞检测,实现了学生公寓漫游的虚拟仿真,达到了复杂场景模型构建简单化的目的. 相似文献
20.
The soil-pile-bridge interaction of super-large pile groups is a very complex issue for the design of deep pile group foundations. In this paper, the load distribution on the pile top of a super large bridge foundation and its influential factors are analyzed comprehensively using a three-dimensional elasto-plastic finite element method. The adopted model and its input parameters are firstly verified by comparing the numerical results with the measured data of static loading tests of a single pile. Numerical analysis is then performed to investigate the load distribution and the load-settlement characteristics of super-large pile groups, and the models are verified using centrifuge laboratory model testing data. The mechanism of the interaction between pile groups and soil under different conditions is explored. 相似文献